FM25V10-GTR

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FM25V10-GTR

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IC FRAM 1MBIT SPI 40MHZ 8SOIC

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 1Mb (128K x 8)
MemoryInterface SPI
ClockFrequency 40 MHz
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Visão Geral

Description

The FM25V10-GTR is a high-performance, non-volatile ferroelectric random access memory (F-RAM) chip. It provides fast, reliable, and energy-efficient data storage with a capacity of 1 Mbit (128K x 8 bits). Unlike traditional EEPROM or Flash memory, F-RAM offers virtually unlimited read/write cycles and rapid data access, making it ideal for applications requiring frequent or instant data updates. The memory retains data without power, ensuring data integrity and reliability.
Operating at a voltage range of 2.0V to 3.6V, the FM25V10-GTR supports a high-speed SPI interface, enabling seamless integration into various systems. Its low power consumption and high endurance make it suitable for use in industrial, automotive, metering, and medical applications. The chip is available in a standard 8-pin SOIC package, offering easy handling and compatibility with existing hardware designs. Overall, the FM25V10-GTR is a robust solution for applications demanding high-speed data processing and retention.

Equivalent

The FM25V10-GTR is a 1-Mbit FRAM (Ferroelectric RAM) chip. Equivalent products include:
1. Cypress CY15B101Q - A similar 1-Mbit FRAM with SPI interface.
2. Fujitsu MB85RS1MT - Another 1-Mbit FRAM with SPI interface.
3. Lapis Semiconductor MR45V100A - A 1-Mbit FRAM chip with SPI.
These alternatives provide similar non-volatile memory with fast write speeds and high endurance. When selecting an equivalent, verify pin compatibility and electrical characteristics.

Features

The FM25V10-GTR is a ferroelectric random access memory (FRAM) device designed for non-volatile data storage with the following features:
1. Memory Size: 1Mb (128 K × 8) memory configuration.
2. Non-Volatile Storage: Retains data without power, ideal for applications requiring data preservation.
3. High Endurance: Supports read/write cycles in the range of 10^14, offering superior endurance compared to EEPROM.
4. Fast Write Speed: Virtually unlimited write endurance and fast write capability at 2.0 µs per 8 bytes.
5. Low Power Consumption: Operates at low power with a wide voltage range (2.0V to 3.6V).
6. Interface: SPI interface for easy integration with microcontrollers and other devices.
7. Data Integrity: Ensures reliable data storage with no data corruption issues.
8. Package Type: Available in a compact 8-pin SOIC package, convenient for space-constrained applications.
9. RoHS Compliant: Environmentally friendly, aligning with Restriction of Hazardous Substances directives.
These features make it suitable for use in industrial controls, automotive systems, metering, and other applications requiring high-reliability memory solutions.

Pinout

The FM25V10-GTR is a 1-Megabit (128K x 8) non-volatile F-RAM (Ferroelectric Random Access Memory) chip, commonly used for high-speed data storage. It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of the pin functions:
1. /CS (Chip Select): Activates the device when low and enables communication.
2. SO (Serial Output): Outputs data from the memory during read operations.
3. /WP (Write Protect): Disables write operations when low to prevent accidental data modification.
4. VSS (Ground): Ground reference for the device.
5. SI (Serial Input): Inputs data to the memory during write operations.
6. SCK (Serial Clock): Provides the clock signal for data communication.
7. /HOLD: Pauses communication without deselecting the device when low.
8. VDD (Power Supply): Positive power supply input for the device.
The FM25V10-GTR operates with a standard SPI (Serial Peripheral Interface) protocol, allowing for fast read and write cycles.

Manufacturer

The FM25V10-GTR is manufactured by Cypress Semiconductor. Cypress Semiconductor is a technology company that specializes in the design and production of a wide range of semiconductor products, including memory solutions, microcontrollers, and connectivity solutions. It is known for its focus on innovative solutions for automotive, industrial, consumer electronics, and other markets. Cypress has been a key player in the semiconductor industry, providing solutions that enable advanced technological applications.

Application

The FM25V10-GTR is a non-volatile F-RAM memory device commonly used in applications requiring high endurance, fast write speeds, and low power consumption. Key application areas include industrial automation systems for data logging, medical devices for patient data storage, automotive systems for event recorders, and metering devices for reliable data capture. It's also suitable for gaming systems for real-time scorekeeping, network equipment for configuration data storage, and smart meters for tamper-proof data retention. The device's ability to retain data without power makes it ideal for critical applications where data integrity and fast access times are essential.

Package

The FM25V10-GTR is a non-volatile F-RAM chip typically packaged in an 8-pin SOIC (Small Outline Integrated Circuit) form, which is suitable for surface mounting on PCBs.

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