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FQA11N90-F109
+Lista de MateriaisMOSFET N-CH 900V 11.4A TO3PN
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Especificações
| Atributo | Valor |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | FQA11 |
Visão Geral
Description
FQA11N90-F109 is a high-voltage n-channel MOSFET designed for industrial applications. It features a low on-state resistance, which enhances efficiency and reduces power loss during operation. With a voltage rating of 1000V and a current capability of up to 11A, it is suitable for use in power supplies, inverter circuits, and other high-voltage applications.
The device is characterized by fast switching speeds, making it ideal for applications requiring rapid modulation of power. Its robust construction ensures reliability and longevity in harsh environments.
Key specifications include low gate threshold voltage, high input impedance, and a wide operating temperature range, which combine to make it a versatile choice for designers looking to optimize performance in their circuits.
Overall, the FQA11N90-F109 is an effective solution for managing high power in a variety of electronic systems, balancing performance, and efficiency.
The device is characterized by fast switching speeds, making it ideal for applications requiring rapid modulation of power. Its robust construction ensures reliability and longevity in harsh environments.
Key specifications include low gate threshold voltage, high input impedance, and a wide operating temperature range, which combine to make it a versatile choice for designers looking to optimize performance in their circuits.
Overall, the FQA11N90-F109 is an effective solution for managing high power in a variety of electronic systems, balancing performance, and efficiency.
Equivalent
The FQA11N90-F109 is an N-channel MOSFET. Equivalent products include the IRF840, STP11NK90Z, and MTP11N90. When looking for alternatives, consider specifications like voltage rating, current rating, and RDS(on) to ensure compatibility in your application. Always verify the datasheet for precise matching.
Features
The FQA11N90-F109 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 90V.
2. Current Rating: Continuous drain current (Id) up to 11A, making it suitable for medium to high power applications.
3. RDS(on): Low on-resistance (typically around 0.11Ω at Vgs = 10V), ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) typically ranges from 2-4V, allowing for compatibility with various gate drive levels.
5. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, contributing to improved efficiency in circuits.
These features make the FQA11N90-F109 suitable for use in power supplies, motor drives, and other electronic applications requiring robust performance.
1. Voltage Rating: Maximum drain-source voltage (Vds) of 90V.
2. Current Rating: Continuous drain current (Id) up to 11A, making it suitable for medium to high power applications.
3. RDS(on): Low on-resistance (typically around 0.11Ω at Vgs = 10V), ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) typically ranges from 2-4V, allowing for compatibility with various gate drive levels.
5. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, contributing to improved efficiency in circuits.
These features make the FQA11N90-F109 suitable for use in power supplies, motor drives, and other electronic applications requiring robust performance.
Pinout
The FQA11N90 is an N-channel MOSFET with a pin count of 3. The primary function of this component is to serve as a switch or amplifier in electronic circuits, particularly for high-voltage applications. The pin configuration is as follows:
1. Gate (G): This pin controls the operation of the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply, providing a return path for the current.
The FQA11N90 can handle high voltages (up to 900V) and currents, making it suitable for applications in power management, converters, and inverters.
1. Gate (G): This pin controls the operation of the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply, providing a return path for the current.
The FQA11N90 can handle high voltages (up to 900V) and currents, making it suitable for applications in power management, converters, and inverters.
Manufacturer
The FQA11N90-F109 is manufactured by Fairchild Semiconductor, a company that specializes in the production of semiconductor solutions. Fairchild Semiconductor, founded in 1957, is known for its innovation in power management, signal management, and other semiconductor technologies. The company serves various sectors, including automotive, consumer electronics, industrial, and telecommunications. With a focus on developing high-performance and efficient semiconductor components, Fairchild's products include MOSFETs, diodes, and integrated circuits, catering to both discrete and integrated circuit applications. The FQA11N90-F109 itself is a N-channel MOSFET used for applications requiring high speed and efficiency. Fairchild Semiconductor has played a pivotal role in advancing technologies within the semiconductor industry.
Application
The FQA11N90-F109 is a high-voltage N-channel MOSFET commonly used in various applications, including:
1. Power Supplies: For voltage regulation and power conversion in switching power supplies.
2. Motor Control: Inverting circuits for driving motors in robotics and industrial applications.
3. DC-DC Converters: Efficient switching in buck, boost, or flyback converters.
4. Lighting Control: Used in LED drivers for dimming and switching applications.
5. Consumer Electronics: Power management in devices like televisions and computers.
6. Renewable Energy: Inverters for solar power systems and energy storage solutions.
Its high voltage and current ratings make it versatile for these applications.
1. Power Supplies: For voltage regulation and power conversion in switching power supplies.
2. Motor Control: Inverting circuits for driving motors in robotics and industrial applications.
3. DC-DC Converters: Efficient switching in buck, boost, or flyback converters.
4. Lighting Control: Used in LED drivers for dimming and switching applications.
5. Consumer Electronics: Power management in devices like televisions and computers.
6. Renewable Energy: Inverters for solar power systems and energy storage solutions.
Its high voltage and current ratings make it versatile for these applications.
Package
The FQA11N90-F109 is typically packaged in a TO-220 format, which is a common package type for high-power MOSFETs. This package provides good thermal performance and is suitable for various applications in power electronics.
