Imagens apenas para referência
FQB55N10TM
+Lista de MateriaisMOSFET N-CH 100V 55A D2PAK
-
Fabricanteonsemi
-
Peça do Fabricante #FQB55N10TM
-
Em Estoque5870
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 27.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2730 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Visão Geral
Description
FQB55N10TM is an N-channel power MOSFET from Fairchild/ON Semiconductor. It is a 100 V, 55 A enhancement‑mode device using trench technology to deliver low on‑resistance and fast switching for power applications. Typical uses include switching power supplies, DC‑DC converters, motor drivers, and other high‑current switching tasks. The gate threshold is usually around 2–4 V; to achieve low Rds(on) it is typically driven with about 10 V (not a true 4.5 V logic‑level part). It offers rugged performance with good dv/dt and di/dt capability and an avalanche rating, and is available in common power packages (surface‑mount or through‑hole variants depending on the exact variant). For exact figures—Rds(on) at a given Vgs, total gate charge, max continuous drain current, thermal limits, and packaging—consult the FQB55N10TM datasheet.
Features
FQB55N10TM is an N-channel enhancement-power MOSFET. Key features include:
- VDS = 100 V; ID (continuous) = 55 A
- RDS(on) ≈ 0.055 Ω (typ) @ VGS = 10 V; ≈ 0.060 Ω (max)
- Gate threshold ~2–4 V; suitable for logic-level drive
- Fast switching with low gate charge; good dv/dt and di/dt
- Avalanche ruggedness for inductive loads
- Wide operating temp range: -55°C to +150°C
- Packaging options (including through‑hole and surface‑mount) with Tape & Reel (TM) variants
- Pb-free/RoHS compliant
Note: exact figures vary by variant; consult the datasheet for precise specs.
- VDS = 100 V; ID (continuous) = 55 A
- RDS(on) ≈ 0.055 Ω (typ) @ VGS = 10 V; ≈ 0.060 Ω (max)
- Gate threshold ~2–4 V; suitable for logic-level drive
- Fast switching with low gate charge; good dv/dt and di/dt
- Avalanche ruggedness for inductive loads
- Wide operating temp range: -55°C to +150°C
- Packaging options (including through‑hole and surface‑mount) with Tape & Reel (TM) variants
- Pb-free/RoHS compliant
Note: exact figures vary by variant; consult the datasheet for precise specs.
Pinout
FQB55N10TM is a 3-pin N‑channel enhancement‑mode power MOSFET (plus a metal heat/tab). Pinout (standard TO‑220/TO‑252 style):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Metal tab/backside: tied to Drain (D)
Function: high‑current, high‑speed N‑channel MOSFET for switching and power applications (typically rated ~100 V, 55 A in its datasheet variants).
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Metal tab/backside: tied to Drain (D)
Function: high‑current, high‑speed N‑channel MOSFET for switching and power applications (typically rated ~100 V, 55 A in its datasheet variants).
Manufacturer
The FQB55N10TM is manufactured by Fairchild Semiconductor (a brand now part of onsemi/ON Semiconductor). Fairchild was an American global semiconductor company that designed and produced discrete power devices and analog ICs—notably power MOSFETs, transistors, and power-management components—serving consumer, industrial, automotive, and computing markets. After its 2016 acquisition, its product lines and technologies were folded into ON Semiconductor.
Application
Typical applications for FQB55N10TM (high-voltage N-channel MOSFET, ~550 V, ~10 A):
- Offline switch-mode power supplies (flyback/forward) and PFC stages
- High-voltage DC-DC converters in telecom/industrial power
- Solar inverters, battery chargers, and energy-storage systems
- Uninterruptible power supplies (UPS) and related power electronics
- Motor drives and inverter circuits for AC motors (low-to-medium power)
- Welding equipment and other high-voltage switching circuits
- General HV switching in power-electronics designs and prototypes
- Offline switch-mode power supplies (flyback/forward) and PFC stages
- High-voltage DC-DC converters in telecom/industrial power
- Solar inverters, battery chargers, and energy-storage systems
- Uninterruptible power supplies (UPS) and related power electronics
- Motor drives and inverter circuits for AC motors (low-to-medium power)
- Welding equipment and other high-voltage switching circuits
- General HV switching in power-electronics designs and prototypes
Package
TO-220AB (through-hole) package.
