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FQP12P20
+Lista de MateriaisMOSFET P-CH 200V 11.5A TO220-3
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Fabricanteonsemi
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Peça do Fabricante #FQP12P20
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Ficha Técnica FQP12P20 DataSheet
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Especificações
| Atributo | Valor |
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQP12 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 5.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Packaging | Tube |
Visão Geral
Description
The FQP12P20 has a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, enhancing efficiency in circuit designs. Its gate threshold voltage (V_GS(th)) is typically between 2V and 4V, allowing for easy interfacing with standard microcontrollers and logic circuits.
This MOSFET is often chosen for applications where reliable switching and thermal performance are critical. It comes in a TO-220 package, facilitating heat dissipation and ease of integration into various PCB designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: Supports continuous drain current (I_D) up to 12A, enabling it to handle significant loads.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 0.08 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with low-voltage signals.
5. Package: Available in a TO-220 package, which provides good thermal performance and easy mounting.
6. Fast Switching: Suitable for fast switching applications, making it ideal for power supplies, motor drivers, and DC-DC converters.
These attributes make the FQP12P20 a versatile choice for various electronic designs requiring reliable power control.
Pinout
1. Gate (G): This pin controls the MOSFET's switching. A negative voltage relative to the source turns the device on.
2. Source (S): This is the terminal where the current enters the MOSFET. It is typically connected to the higher voltage in a P-channel application.
3. Drain (D): This pin is where the current exits the MOSFET. It connects to the load being driven by the device.
The FQP12P20 is designed for low-voltage high-speed switching applications and has a maximum rating of 20V with a continuous drain current of 12A. It is commonly used in power management and control circuits.
Manufacturer
Founded in 1999, ON Semiconductor has grown through both organic growth and strategic acquisitions, positioning itself as a leader in integrated circuits and discrete semiconductor devices. Their product portfolio includes power MOSFETs, voltage regulators, and sensors, among others, with a commitment to sustainability and reducing environmental impact through energy-efficient designs.
The FQP12P20 is a P-channel power MOSFET, commonly used in applications like power management and switching circuits, reflecting ON Semiconductor's focus on high-performance, reliable components for various electronic systems. Overall, ON Semiconductor plays a crucial role in advancing technology across multiple sectors through its semiconductor innovations.
Application
1. Switching Power Supplies: Efficiently managing power conversion and regulation.
2. Motor Control: Driving DC motors in robotics and automation.
3. Audio Amplifiers: Enhancing sound amplification with low distortion.
4. Power Inverters: Converting DC to AC for renewable energy systems.
5. LED Lighting: Controlling brightness and efficiency in LED circuits.
6. Battery Management Systems: Ensuring safe charging and discharging of batteries.
These applications benefit from the device's low on-resistance and high-speed switching capabilities.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating for the FQP12P20?
A: The FQP12P20 has a Vdss rating of 200 V, suitable for medium-voltage power conversion applications.
Q: Can this P-Channel MOSFET be driven with a 5V logic level?
A: No, it requires a 10V gate drive for optimal Rds(on); the maximum threshold voltage is 5V at 250μA.
Q: What is the maximum continuous drain current at 25°C case temperature?
A: The Id rating is 11.5A (Tc), but derating is required at higher operating temperatures.
Q: What is the typical on-resistance Rds(on) for this device?
A: Maximum Rds(on) is 470mΩ at Id=5.75A and Vgs=10V, ensuring efficient low-loss switching.
Q: Is the FQP12P20 suitable for high-frequency switching applications?
A: With a gate charge of 40nC and input capacitance of 1200pF, it is best for moderate-speed, low-frequency switching.
Q: What package type does this component use?
A: It comes in a TO-220-3 through-hole package, providing excellent thermal performance for up to 120W power dissipation.
Q: What is the maximum gate-to-source voltage allowed?
A: The Vgs maximum rating is ±30V, ensuring robust gate drive tolerance in high-voltage systems.
