FQPF10N60C

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FQPF10N60C

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MOSFET N-CH 600V 9.5A TO220F

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Especificações

Atributo Valor
Series QFET®
Part Status Obsolete
Base Product Number FQPF10
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package TO-220-3 Full Pack
Packaging Tube

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Description

The FQPF10N60C is a power MOSFET designed for high-efficiency applications, such as switching power supplies, motor control, and other high-speed switching devices. It is an N-channel MOSFET with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. The device features low on-resistance, typically around 0.55 ohms, which minimizes conduction losses.
This MOSFET is housed in a TO-220F package, which is known for good thermal performance and electrical isolation, making it suitable for applications that require heat dissipation without the need for additional insulation. Its fast switching speed enhances efficiency and reduces energy losses. Additionally, the FQPF10N60C ensures reliable performance under high-voltage conditions due to its robust construction.
The FQPF10N60C is part of the FQPF series, which is manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is widely used in industrial and consumer applications where high voltage and current handling are required.

Equivalent

The FQPF10N60C is an N-channel MOSFET. Equivalent products include:
1. IRFP460 by International Rectifier
2. STP12NM60 by STMicroelectronics
3. FDPF12N60 by Fairchild Semiconductor
4. SPW10N60C3 by Infineon Technologies
When selecting an equivalent, ensure key specifications like voltage, current ratings, and package type match your application requirements.

Features

The FQPF10N60C is a N-channel MOSFET designed for various applications requiring efficient power management and switching. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A, making it suitable for high-voltage applications.
2. R_DS(on): The device offers a low on-resistance, which reduces power loss and improves efficiency.
3. Fast Switching: It provides fast switching speeds, which are beneficial for applications like switching power supplies, converters, and motor controls.
4. Thermal Performance: Encased in a TO-220F package, it offers good thermal performance, aiding in heat dissipation.
5. Ruggedness: The FQPF10N60C is designed to handle significant electrical stress, enhancing its reliability in demanding environments.
6. Built-in Diode: It includes an intrinsic body diode for handling reverse recovery currents, further increasing its versatility in AC switching and other applications.
These features make the FQPF10N60C a versatile choice for various industrial and consumer power applications.

Pinout

The FQPF10N60C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a TO-220F package. It has three pins:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is on. It is connected to the load.
3. Source (S): The source is the terminal through which the main current exits the MOSFET. It is typically connected to the ground in a circuit.
The FQPF10N60C is commonly used for switching applications and in power supply circuits due to its high voltage and current capabilities. It has a maximum drain-source voltage of 600V and a continuous drain current of 10A.

Manufacturer

The FQPF10N60C is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global semiconductor manufacturing company. It designs and produces a broad range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various applications. These applications span different sectors such as automotive, industrial, communications, computing, and consumer electronics. Onsemi is known for providing energy-efficient solutions and is a key player in driving innovation in power management and connectivity technologies.

Application

The FQPF10N60C is a power MOSFET commonly used in various applications due to its high voltage and current capabilities. Typical application areas include:
1. Switching Power Supplies: Used in AC/DC converters and uninterruptible power supplies (UPS) for efficient power conversion.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Lighting: Used in electronic ballasts and LED drivers for efficient lighting solutions.
4. Inverters: Applied in DC/AC inverters for solar and other renewable energy systems.
5. Audio Amplifiers: Utilized in high-power audio amplifier circuits for better sound quality.
Its low on-resistance and fast switching make it suitable for these and other high-performance power management applications.

Package

The FQPF10N60C is a MOSFET transistor, and its package type is TO-220F. The TO-220F package is a variant of the TO-220 package with a fully encapsulated plastic body that includes an isolated mounting hole, providing electrical isolation without the need for additional insulating hardware.

Frequently Asked Questions


Q: What is the maximum drain-source voltage (Vdss) for the FQPF10N60C?
A: The FQPF10N60C has a maximum drain-source voltage (Vdss) of 600 V, suitable for high-voltage applications.


Q: What is the continuous drain current rating at 25°C?
A: The continuous drain current (Id) is rated at 9.5 A at a case temperature (Tc) of 25°C.


Q: What is the typical Rds(on) value for this MOSFET?
A: The maximum Rds(on) is 730 mOhm at a drain current of 4.75A and gate-source voltage of 10V.


Q: What is the gate charge (Qg) specification?
A: The maximum gate charge (Qg) is 57 nC at a gate-source voltage (Vgs) of 10 V, ensuring efficient switching.


Q: What is the maximum power dissipation of this device?
A: The maximum power dissipation is 50 W at a case temperature (Tc) of 25°C.


Q: What is the operating temperature range for the FQPF10N60C?
A: The device operates over a junction temperature range of -55°C to +150°C.


Q: What package type is the FQPF10N60C available in?
A: It comes in a TO-220-3 Full Pack (TO-220F-3) package, mounting type Through Hole.


Q: What is the threshold voltage (Vgs(th)) specification?
A: The maximum gate threshold voltage is 4V at a drain current of 250 µA, ensuring reliable turn-on.


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