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FQPF12N60C
+Lista de MateriaisMOSFET N-CH 600V 12A TO220F
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Especificações
| Atributo | Valor |
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQPF1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Power Dissipation (Max) | 51W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
Visão Geral
Description
- Voltage Rating: 600V drain-source voltage (VDSS), suitable for power supplies and inverters.
- Current Handling: 12A continuous drain current (ID) at 25°C.
- Low On-Resistance: 0.65Ω (typical), reducing conduction losses.
- Fast Switching: Optimized gate charge (Qg) for efficient performance in switching circuits.
- Package: TO-220F (fully insulated), enhancing thermal dissipation and safety.
Common applications include SMPS (Switched-Mode Power Supplies), motor drives, and lighting ballasts. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor).
Equivalent
- IRFBC40 (600V, 6.2A)
- STP12NM60FP (600V, 12A)
- IPP60R190C6 (600V, 11A)
- FCPF12N60 (600V, 12A)
Check datasheets for exact specs like RDS(on) and package compatibility before substitution.
Features
- Voltage Rating: 600V drain-to-source (VDSS).
- Current Rating: 12A continuous drain current (ID).
- Low On-Resistance: 0.65Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Improves reliability in inductive loads.
- Package: TO-220F (fully insulated), suitable for easy mounting and heat dissipation.
Ideal for power supplies, motor control, and inverters due to its high voltage and efficient switching performance.
Pinout
- Pin Count: 3 pins (standard TO-220F configuration).
- Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
It features low on-resistance (RDS(on)) and fast switching, making it suitable for power supplies, inverters, and motor control.
Package
Frequently Asked Questions
Q: What is the maximum drain current this MOSFET can handle at 25°C?
A: The FQPF12N60C can handle a continuous drain current of up to 12A at a case temperature of 25°C.
Q: What is the typical on-resistance (Rds(on)) for this device?
A: The maximum Rds(on) is 650mOhm at a gate-source voltage of 10V and a drain current of 6A.
Q: Is this component suitable for high-voltage switching applications?
A: Yes, it is an N-Channel MOSFET rated for a drain-to-source voltage (Vdss) of 600V, making it ideal for high-voltage power supplies.
Q: What is the maximum gate threshold voltage (Vgs(th))?
A: The maximum gate threshold voltage is 4V, achieved at a drain current of 250µA.
Q: How much power can this MOSFET dissipate under typical conditions?
A: The maximum power dissipation is 51W at the case temperature (Tc), suitable for many power conversion circuits.
Q: What is the operating temperature range for the FQPF12N60C?
A: It operates over a junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments.
Q: What package type does this component use?
A: It uses a TO-220-3 Full Pack (TO-220F-3) through-hole package, designed for easy mounting and thermal management.
Q: Does this device require a specific drive voltage to fully turn on?
A: Yes, the recommended drive voltage is 10V to achieve the specified low on-resistance and optimal performance.
