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FS200R12KT4R
+Lista de MateriaisIGBT Modules IGBT 1200V 200A
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FabricanteTecnologias Infineon
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Peça do Fabricante #FS200R12KT4R
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Ficha Técnica FS200R12KT4R DataSheet
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Especificações
| Atributo | Valor |
| Packaging | Tray |
| Standard Pack Qty | 10 |
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Description
Key features of the FS200R12KT4R include low switching losses, high thermal conductivity, and robust construction, which allows for effective heat dissipation. It typically operates with a blocking voltage of 1200V and can handle a continuous current of up to 200A. The module also integrates a diode, which aids in improved performance and efficiency in power conversion applications. Additionally, its design supports easy integration into high-power systems, making it a popular choice for engineers looking to optimize energy efficiency and system reliability.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage of 1200V and a collector current of 200A, making it suitable for medium to high power applications.
2. IGBT Technology: Utilizes advanced IGBT technology, offering high efficiency and fast switching capabilities, which is crucial for reducing power losses and enhancing performance in various electrical systems.
3. Integrated Protection: The module often comes with integrated features like short-circuit protection and over-temperature protection to enhance reliability and safeguard against operational faults.
4. Low Saturation Voltage: Designed to have a low V_CE(sat) (collector-emitter saturation voltage), which minimizes conduction losses, contributing to overall energy efficiency.
5. Thermal Management: Equipped with a robust design to support effective thermal management, allowing for operation under high-temperature conditions.
6. Applications: Commonly used in motor drives, renewable energy systems, uninterruptible power supplies (UPS), and other industrial applications where efficient power conversion is essential.
Pinout
The primary function of the FS200R12KT4R is to serve as a power switch that can efficiently handle high currents and voltages, up to 1200V and 200A. It contains IGBTs (Insulated Gate Bipolar Transistors) and freewheeling diodes configured in a half-bridge topology. This configuration is commonly used for managing the conversion of DC to AC power or vice versa, controlling motor speeds, and driving inductive loads.
The pins in the module are designated for power connections, gate drive signals, auxiliary connections, and temperature sensing, among others. Its design allows for high efficiency and reliability in demanding environments, making it suitable for applications that require robust thermal management and electrical performance.