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GD25WQ128ESIGR
+Lista de MateriaisIC FLASH 128MBIT SPI/QUAD 8SOP
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FabricanteGigaDevice Semiconductor (HK) Limited
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Peça do Fabricante #GD25WQ128ESIGR
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | SPI - Quad I/O |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.209", 5.30mm Width) |
| Supplier Device Package | 8-SOP |
| Base Product Number | GD25WQ128 |
| Clock Frequency | 104 MHz |
| Access Time | 8 ns |
Visão Geral
Description
Key features of the GD25WQ128ESIGR include a 3.3V power supply, high-speed performance with a clock frequency of up to 133 MHz, and support for standard, dual, and quad SPI protocols. The chip offers uniform 4KB sectors, 32KB/64KB blocks, and supports erase, program, and read operations. It also includes features like hardware and software write protection, and efficient power management with deep power-down modes.
The GD25WQ128ESIGR ensures data integrity and security through its robust endurance and data retention capabilities. It is packaged in an 8-pin SOP (Small Outline Package) or other compact forms, making it suitable for space-constrained applications. Overall, this chip is valued for its reliability, speed, and versatility in memory-intensive applications.
Equivalent
Features
Key features include:
1. Dual and Quad I/O: Supports dual and quad input/output for enhanced data throughput.
2. High-Speed Read/Write: Capable of fast read, page program, and block erase operations.
3. Low Power Consumption: Optimized for low power usage, making it suitable for battery-powered devices.
4. Data Retention and Endurance: Offers reliable data retention and endurance with a lifespan up to 100,000 program/erase cycles.
5. Erase Capability: Includes sector and block erase functions for efficient memory management.
6. Wide Temperature Range: Suitable for various applications with an operational temperature range typically from -40°C to +85°C.
The GD25WQ128ESIGR is ideal for applications in consumer electronics, industrial automation, and IoT devices.
Pinout
1. CS# (Chip Select): This active-low pin enables the device. When CS# is high, the device is deselected and in standby mode.
2. DO (Data Output): This serves as the data output pin during read operations.
3. WP# (Write Protect): This active-low pin is used to protect certain sections of the memory from being altered.
4. GND (Ground): The ground reference pin for the device.
5. DI (Data Input)/IO0: This pin is used for data input during write operations or as I/O0 in quad I/O modes.
6. CLK (Clock): This clock input pin is used to synchronize the data transfer.
7. RESET#/HOLD#: In some configurations, this pin is used to reset the device or hold operations.
8. VCC: The supply voltage pin for the device.
These pins collectively enable the GD25WQ128ESIGR to function as a versatile non-volatile memory component in various electronic applications.
Manufacturer
Application
1. Embedded Systems: Used for storing firmware and configuration data.
2. Consumer Electronics: Integrated into devices like smartphones and tablets for system boot and data storage.
3. Automotive: Employed in infotainment systems and advanced driver-assistance systems (ADAS).
4. Industrial Equipment: Utilized in control systems and industrial automation for data logging and firmware updates.
5. Internet of Things (IoT): Serves as a storage solution for IoT devices, facilitating data storage and firmware updates.
Its fast read speeds and durability make it suitable for applications requiring frequent data access and updates.