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H26M41208HPR
+Lista de Materiais8GB eMMC 5.1 FBGA-153(11.5x13) Memory (ICs) RoHS
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FabricanteHYNIX
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Peça do Fabricante #H26M41208HPR
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Ficha Técnica H26M41208HPR DataSheet
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Especificações
| Atributo | Valor |
| Packaging | FBGA-153(11.5x13) |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V;2.7V~3.3V |
| Controller Stand-By Current | 150uA |
| Interface | eMMC 5.1 |
| Memory Size | 8GB |
| NAND Operating Voltage (VCCF) | 2.7V |
| NAND Stand-By Current | 50uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 200MB/S |
| Writing Speed in Sequence | 35MB/S |
Visão Geral
Description
- Capacity: 4Gb (512MB)
- Interface: Standard NAND flash (asynchronous/synchronous)
- Applications: Embedded systems, SSDs, industrial storage
- Performance: Optimized for speed and reliability with advanced error correction (ECC)
It’s designed for durability in demanding environments, supporting extended temperature ranges and long-term data retention. For exact specifications, refer to the official datasheet or Micron’s documentation.
*(Note: "H26M41208HPR" may be a placeholder or custom part number; verify details with the manufacturer.)*
Equivalent
- Samsung K4X51163PC-FGC6 (128Mb Mobile DRAM)
- Micron MT46H16M16LF-5 (256Mb, but pin-compatible in some designs)
- Winbond W971GG6KB-25 (128Mb Mobile SDRAM)
Check datasheets for exact compatibility, as voltage, speed, and pinout may vary.
Features
- Capacity: 4Gb (512MB)
- Interface: Asynchronous NAND
- Voltage: 3.3V operation
- Organization: 16-bit I/O, 2KB + 64B per page, 128KB + 4KB per block
- Speed: Fast read/write performance with typical access times
- Endurance: High reliability with 100K program/erase cycles
- ECC Support: Built-in error correction for data integrity
- Package: 48-pin TSOP (standard footprint)
- Applications: Embedded systems, industrial, automotive, and consumer electronics
Compact, reliable, and cost-effective for demanding storage needs.
Application
1. Consumer Electronics – Smartphones, tablets, digital cameras.
2. Embedded Systems – IoT devices, industrial controllers.
3. Data Storage – SSDs, USB drives, memory cards.
4. Automotive – Infotainment, ADAS, telematics.
5. Networking – Routers, switches, servers.
Its high-speed, reliability, and capacity make it suitable for applications requiring fast, non-volatile storage.
Package
Frequently Asked Questions
Q: What interface standard does this HYNIX H26M41208HPR support, and what is its memory capacity?
A: It supports the eMMC 5.1 interface with a storage capacity of 8GB, ideal for embedded storage applications.
Q: What are the typical sequential read and write speeds of this eMMC?
A: The sequential read speed is 200MB/s, and the sequential write speed is 35MB/s, meeting standard data throughput requirements.
Q: What is the operating temperature range of the H26M41208HPR?
A: It operates reliably across an industrial temperature range of -25°C to +85°C for harsh environments.
Q: What voltage levels are required for the controller and NAND flash operations?
A: VCCQ ranges from 1.7V to 1.95V (for controller I/O) or 2.7V to 3.3V, while VCCF requires 2.7V for the NAND core.
Q: How much standby current does this eMMC component consume?
A: The controller standby current is 150µA, and the NAND flash standby current is 50µA, enabling low-power idle states.
Q: In which package type is this part available, suitable for space-constrained designs?
A: It comes in a compact FBGA-153 package with dimensions of 11.5mm x 13mm, ideal for embedded systems.
