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H26M64208EMR
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FabricanteSK Hynix
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Peça do Fabricante #H26M64208EMR
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Especificações
| Atributo | Valor |
| Manufacturer | SK HYNIX |
| Package / Case | FBGA-153_11.5X13.0mm |
Visão Geral
Equivalent
- K9F8G08U0M (Samsung)
- MT29F64G08CBAAA (Micron)
- TH58NVG6S2FTA20 (Toshiba/Kioxia)
These are similar in capacity (64Gb) and interface (SLC/MLC NAND). Verify pin compatibility and specifications before substitution. For exact matches, consult datasheets or distributors.
Features
- Interface: SPI (Serial Peripheral Interface) for high-speed communication.
- Density: 64 Megabits (8 Megabytes) organized in uniform 4KB sectors.
- Speed: Supports up to 104MHz clock frequency for fast read operations.
- Voltage Range: 2.7V–3.6V, suitable for embedded systems.
- Low Power: Deep power-down mode for energy efficiency.
- Reliability: 100,000+ erase/program cycles and 20+ years data retention.
- Security: Hardware write protection and software lock features.
- Package: Common 8-pin SOP (150mil) for compact designs.
Ideal for firmware storage, IoT devices, and automotive applications. Check the datasheet for exact timing and compatibility.
Pinout
Key Functions:
- 8-bit parallel I/O interface for data transfer.
- Asynchronous read/write operations with standard control signals (CE#, OE#, WE#).
- Sector erase (4KB/32KB) and full-chip erase support.
- Low-power standby mode for reduced consumption.
- Wide voltage range (typically 2.7V–3.6V).
Pin Count: 48 pins (including address, data, control, and power pins).
This chip is commonly used in embedded systems for firmware storage.
Manufacturer
SK Hynix is a leading global producer of memory chips, specializing in DRAM, NAND flash, and other semiconductor solutions. It is one of the largest memory suppliers worldwide, competing with companies like Samsung and Micron. The company serves industries such as consumer electronics, data storage, and enterprise computing.
The H26M64208EMR is a 3D NAND flash chip, reflecting SK Hynix's expertise in high-density, high-performance memory technology.