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FBGA-96 Memory (ICs) RoHS
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FabricanteHYNIX
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Peça do Fabricante #H5TQ4G63EFR-RDI
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Especificações
| Atributo | Valor |
| Packaging | FBGA-96 |
Visão Geral
Description
- Capacity: 4Gb (organized as 512M x 8).
- Speed: Up to 1866 Mbps (DDR3-1866).
- Voltage: 1.5V (standard DDR3).
- Package: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Refresh: Auto-refresh and self-refresh modes.
- Applications: Consumer electronics, networking, and embedded systems.
It supports 8 internal banks, CAS latencies (CL) from 5 to 13, and burst lengths of 8 for efficient data transfer. The RDI suffix indicates a RoHS-compliant, industrial-grade component.
This chip is ideal for systems requiring low power, high speed, and reliability, such as set-top boxes, routers, and industrial PCs.
Equivalent
- Micron: MT41K512M4DA-107 (4Gb DDR3)
- Samsung: K4B4G1646E-BCMA (4Gb DDR3)
- Nanya: NT5CC256M16EP-EK (4Gb DDR3)
Ensure compatibility with voltage (1.5V/1.35V), speed (e.g., 1600MHz), and pin configuration (96-ball FBGA) when substituting. Always verify datasheets for exact specs.
Features
- Capacity: 4Gb (organized as 512M x 8)
- Voltage: Low-power 1.35V (DDR3L), compatible with 1.5V
- Speed: 1866 Mbps (DDR3L-1866)
- Latency: CL13 (13-13-13 timings)
- Package: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Refresh: Auto-refresh & self-refresh support
- Operating Temp: Commercial (0°C to 95°C)
- Density: 4 banks, 8-bit prefetch
Designed for low-power applications like embedded systems, networking, and mobile devices.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Key Functions:
- 8-bit data bus (DQ0-DQ7)
- DDR3 interface (1.5V operation)
- On-Die Termination (ODT)
- Programmable CAS Latency (CL)
- Auto Refresh & Self Refresh modes
- Supports 800-1600 Mbps data rates
Used in consumer electronics, networking, and embedded systems for high-speed memory needs.
Manufacturer
SK Hynix is a major global producer of memory chips, specializing in DRAM, NAND flash, and other semiconductor solutions. It is one of the largest memory suppliers worldwide, competing with companies like Samsung and Micron. The company supplies components for consumer electronics, servers, and enterprise storage systems.
The H5TQ4G63EFR-RDI is commonly used in embedded systems, networking devices, and industrial applications.
Package
Frequently Asked Questions
Q: What is the specific package type of the H5TQ4G63EFR-RDI?
A: It uses an FBGA-96 (Fine-Pitch Ball Grid Array with 96 balls) package, suitable for high-density memory integration.
Q: Is this component a DDR3 or DDR4 memory device?
A: Based on the HYNIX part numbering scheme, the “TQ” indicates it is a DDR3 SDRAM. Not a DDR4 or LPDDR device.
Q: What is the memory density configuration of this part?
A: “4G” in the number stands for 4Gb density. Combined with “x63” it’s typically organized as 256Mx16 for a single rank device.
Q: Is this memory module designed for server or consumer applications?
A: The “-RDI” suffix typically denotes a Registered DIMM application, making it ideal for servers and enterprise storage systems.
Q: What is the operating temperature range for this component?
A: Standard HYNIX DDR3 FBGA packages usually support 0°C to +95°C Tc operation, but please verify specific datasheet for the –RDI variant.
Q: Does this component support ECC (Error Correction Code) functionality?
A: As part of an RDIMM, the registered design inherently supports ECC. The specific DRAM chip itself provides 8-bit ECC data width per chip.
Q: What is the pin pitch for this FBGA-96 package?
A: The FBGA-96 package for DDR3 SDRAM typically features a 0.8mm ball pitch, enabling compact PCB layout.
