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HGTG30N60C3D
+Lista de MateriaisIGBT 600V 63A TO-247
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FabricanteSemiconductor Fairchild
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Peça do Fabricante #HGTG30N60C3D
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Ficha Técnica HGTG30N60C3D DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 63 A |
| Current - Collector Pulsed (Icm) | 252 A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Power - Max | 208 W |
| Switching Energy | 1.05mJ (on), 2.5mJ (off) |
| Input Type | Standard |
| Gate Charge | 162 nC |
| Reverse Recovery Time (trr) | 60 ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
Visão Geral
Description
The HGTG30N60C3D is a high-voltage, N-channel MOSFET designed for various power applications. It features a voltage rating of 600V and a continuous drain current of 30A, making it suitable for switched-mode power supplies, motor drives, and other high-power applications. This device offers low on-resistance and fast switching capabilities, which improve efficiency and thermal performance in power conversion systems.
Key specifications include a maximum gate-source voltage rating of ±20V, a total gate charge of around 30 nC, and a low RDS(on) value, typically around 0.17 ohms, at a gate voltage of 10V. The HGTG30N60C3D is housed in a TO-247 package, facilitating effective heat dissipation. Its robust design and performance make it an ideal choice for applications requiring high efficiency and reliability in demanding environments.
Key specifications include a maximum gate-source voltage rating of ±20V, a total gate charge of around 30 nC, and a low RDS(on) value, typically around 0.17 ohms, at a gate voltage of 10V. The HGTG30N60C3D is housed in a TO-247 package, facilitating effective heat dissipation. Its robust design and performance make it an ideal choice for applications requiring high efficiency and reliability in demanding environments.
Equivalent
The HGTG30N60C3D is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the HGTG30N60D, HGTG30N60A3, and the FGA30N60. It's essential to verify specifications such as voltage, current ratings, and switching characteristics when selecting equivalents to ensure compatibility in your application.
Features
The HGTG30N60C3D is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 30A, depending on the thermal conditions.
3. Low Rds(on): With a low on-resistance, typically around 0.35 ohms, it ensures efficient operation with minimal power loss.
4. Fast Switching: Designed for high-frequency applications, it offers rapid switching capabilities, improving overall performance in power conversion.
5. Thermal Performance: The device features a low thermal resistance, allowing better heat dissipation, which is crucial for reliability in high-power applications.
6. Package: It comes in a TO-247 package, providing good thermal characteristics and ease of mounting.
These features make HGTG30N60C3D suitable for use in applications like switch-mode power supplies (SMPS), motor drives, and other power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 30A, depending on the thermal conditions.
3. Low Rds(on): With a low on-resistance, typically around 0.35 ohms, it ensures efficient operation with minimal power loss.
4. Fast Switching: Designed for high-frequency applications, it offers rapid switching capabilities, improving overall performance in power conversion.
5. Thermal Performance: The device features a low thermal resistance, allowing better heat dissipation, which is crucial for reliability in high-power applications.
6. Package: It comes in a TO-247 package, providing good thermal characteristics and ease of mounting.
These features make HGTG30N60C3D suitable for use in applications like switch-mode power supplies (SMPS), motor drives, and other power electronics.
Pinout
The HGTG30N60C3D is a high-voltage N-channel MOSFET designed for use in various power applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The main current-carrying terminal through which current flows from the drain to the source when the device is on.
3. Source (S): The terminal that connects to the ground or the negative side of the power supply; current flows out of this pin when the MOSFET is conducting.
4. Gate-Source (G-S): This connection is typically internal and facilitates the gate drive.
5. Gate-Drain (G-D): This connection is also internal, offering added stability or capacitance effects.
This MOSFET is rated for 600V and has a continuous drain current capability of 30A, making it suitable for high-power applications like inverters, motor drives, and power supplies.
1. Gate (G): Controls the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The main current-carrying terminal through which current flows from the drain to the source when the device is on.
3. Source (S): The terminal that connects to the ground or the negative side of the power supply; current flows out of this pin when the MOSFET is conducting.
4. Gate-Source (G-S): This connection is typically internal and facilitates the gate drive.
5. Gate-Drain (G-D): This connection is also internal, offering added stability or capacitance effects.
This MOSFET is rated for 600V and has a continuous drain current capability of 30A, making it suitable for high-power applications like inverters, motor drives, and power supplies.
Manufacturer
The HGTG30N60C3D is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in providing energy-efficient solutions and semiconductor technologies across various industries, including automotive, industrial, and consumer electronics. The company is known for its innovation in power semiconductors, microcontrollers, and sensor technology, contributing to advancements in energy management, automation, and connectivity. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates worldwide and focuses on developing products that enhance efficiency and sustainability in electronic systems.
Application
The HGTG30N60C3D is a high-voltage, N-channel MOSFET primarily used in various applications including:
1. Power Supplies: Ideal for switch-mode power supplies (SMPS) and DC-DC converters due to its high efficiency.
2. Motor Control: Utilized in motor drivers for industrial and automotive applications.
3. Inverter Circuits: Employed in renewable energy systems, such as solar inverters and UPS systems.
4. Lighting: Suitable for LED drivers and lighting control systems.
5. Telecommunications: Used in RF amplifiers and other high-frequency applications.
Its high voltage and current ratings make it versatile for demanding power electronics applications.
1. Power Supplies: Ideal for switch-mode power supplies (SMPS) and DC-DC converters due to its high efficiency.
2. Motor Control: Utilized in motor drivers for industrial and automotive applications.
3. Inverter Circuits: Employed in renewable energy systems, such as solar inverters and UPS systems.
4. Lighting: Suitable for LED drivers and lighting control systems.
5. Telecommunications: Used in RF amplifiers and other high-frequency applications.
Its high voltage and current ratings make it versatile for demanding power electronics applications.
Package
The HGTG30N60C3D is packaged in a TO-247 format, which is a high-power package type designed for efficient heat dissipation and easy mounting in various applications, including industrial and automotive power systems.