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HR641680E
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FabricanteHANRUN(Zhongshan HanRun Elec)
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Peça do Fabricante #HR641680E
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Ficha Técnica HR641680E DataSheet
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Especificações
| Atributo | Valor |
| Manufacturer | HANRUN(Zhongshan HanRun Elec) |
| Package / Case | SMD-16P,12.7x9.5mm |
| Turns Ratio | 1:1 |
Visão Geral
Equivalent
- CY7C1680KV18 (Cypress)
- IDT71V67803S (IDT/Renesas)
- IS61WV102416BLL (ISSI)
- AS7C16800A (Alliance Memory)
These alternatives offer comparable speed (up to 166MHz) and density (16Mb). Verify pin compatibility and voltage requirements (3.3V typical) for your design. Always check datasheets for exact specifications.
Features
- Capacity: 1GB (8Gb)
- Interface: DDR3, 1.5V operation
- Speed: Up to 1600 Mbps/pin (PC3-12800)
- Organization: 128M x 8 (8-bit bus)
- Low Power: Supports auto-refresh & self-refresh modes
- Reliability: Industrial-grade (-40°C to +95°C)
- Packaging: 96-ball FBGA (6x9mm)
- Applications: IoT, networking, automotive, and industrial devices
Compact and efficient, it ensures stable performance in demanding environments.
Pinout
Key Functions:
- 64Mbit (8MB) capacity
- 16-bit data bus
- Supports fast page mode (FPM) and extended data out (EDO) operations
- Used in 486/Pentium-era systems
Pin Functions Include:
- Address inputs (A0-A10)
- Data I/O (DQ0-DQ15)
- Control signals (/RAS, /CAS, /WE, /OE)
- Power supply (VCC, VSS)
This DRAM is now obsolete but was widely used in 1990s PCs.