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IKW30N65ES5
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FabricanteTecnologias Infineon
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Peça do Fabricante #IKW30N65ES5
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Especificações
| Atributo | Valor |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Series | TRENCHSTOP 5 S5 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Unit Weight | 1.340411 oz |
| Factory Pack Quantity | 240 |
| Part # Aliases | SP001319678 IKW30N65ES5XKSA1 |
| Technology | Si |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 650 V |
| Collector - Emitter Saturation Voltage | 1.35 V |
| Continuous Collector Current at 25 C | 62 A |
| Pd - Power Dissipation | 188 W |
| Gate - Emitter Leakage Current | 100 nA |
| Tradename | TRENCHSTOP |
| Height | 5.21 mm |
| Length | 21.1 mm |
| Width | 16.13 mm |
| Operating Temperature | - 40 C to + 175 C |
Visão Geral
Description
The IKW30N65ES5 is a high-performance N-channel MOSFET designed for a variety of power applications, including switch-mode power supplies, inverters, and motor drivers. With a voltage rating of 650V and a continuous current rating of 30A, it offers high efficiency and reliability in demanding environments. The device features a low on-resistance (RDS(on)) which minimizes conduction losses, enhancing overall performance.
Its fast switching capabilities enable efficient operation at high frequencies, making it suitable for high-speed applications. The IKW30N65ES5 also benefits from a rugged construction, ensuring robustness against voltage and thermal stresses. It is packaged in a TO-247 format, facilitating effective heat dissipation.
The MOSFET is particularly advantageous in applications requiring high efficiency and thermal management, such as renewable energy systems and electric vehicles. Overall, the IKW30N65ES5 is a valuable component for engineers seeking reliable and efficient solutions in power electronics.
Its fast switching capabilities enable efficient operation at high frequencies, making it suitable for high-speed applications. The IKW30N65ES5 also benefits from a rugged construction, ensuring robustness against voltage and thermal stresses. It is packaged in a TO-247 format, facilitating effective heat dissipation.
The MOSFET is particularly advantageous in applications requiring high efficiency and thermal management, such as renewable energy systems and electric vehicles. Overall, the IKW30N65ES5 is a valuable component for engineers seeking reliable and efficient solutions in power electronics.
Equivalent
The IKW30N65ES5 is an N-channel MOSFET with a voltage rating of 650V and a current rating of 30A. Equivalent products include the Infineon IKW30N65H3, ON Semiconductor NTMFS5C665N, and STMicroelectronics STP30NF65. Always verify specifications and application requirements for compatibility.
Features
The IKW30N65ES5 is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 30A, allowing for robust performance under load.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching Speed: Optimized for high-speed switching, which is beneficial for applications like power supplies and converters.
5. Thermal Performance: It features good thermal stability, with a maximum junction temperature of 150°C, allowing for reliable operation in demanding conditions.
6. TO-247 Package: Offered in a TO-247 package, facilitating efficient heat dissipation and mounting.
These characteristics make the IKW30N65ES5 suitable for various applications, including switch-mode power supplies, motor drives, and industrial equipment.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 30A, allowing for robust performance under load.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching Speed: Optimized for high-speed switching, which is beneficial for applications like power supplies and converters.
5. Thermal Performance: It features good thermal stability, with a maximum junction temperature of 150°C, allowing for reliable operation in demanding conditions.
6. TO-247 Package: Offered in a TO-247 package, facilitating efficient heat dissipation and mounting.
These characteristics make the IKW30N65ES5 suitable for various applications, including switch-mode power supplies, motor drives, and industrial equipment.
Pinout
The IKW30N65ES5 is an N-channel power MOSFET with a pin count of 4. It is typically housed in a TO-220 package.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation by applying a voltage.
2. Drain (D): The current flows into this pin when the MOSFET is on, connecting to the load.
3. Source (S): This pin serves as the return path for the current flowing out from the drain when the MOSFET is conducting.
4. Tab (or Heat Sink): This is not a functional pin but serves as a heat dissipation point, usually connected to the source.
The IKW30N65ES5 is designed for high-voltage applications, with a blocking voltage of 650V and a continuous drain current of up to 30A, making it suitable for power conversion and control applications.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation by applying a voltage.
2. Drain (D): The current flows into this pin when the MOSFET is on, connecting to the load.
3. Source (S): This pin serves as the return path for the current flowing out from the drain when the MOSFET is conducting.
4. Tab (or Heat Sink): This is not a functional pin but serves as a heat dissipation point, usually connected to the source.
The IKW30N65ES5 is designed for high-voltage applications, with a blocking voltage of 650V and a continuous drain current of up to 30A, making it suitable for power conversion and control applications.
Manufacturer
The IKW30N65ES5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Founded in 1999, Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, sensors, and microcontrollers. The company operates in various sectors such as automotive, industrial, and consumer electronics, focusing on innovation in energy efficiency and connectivity. Infineon is particularly recognized for its contributions to power management and energy efficiency technologies, making it a key player in the semiconductor industry globally.
Application
The IKW30N65ES5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as power converters, motor drives, and renewable energy systems like solar inverters. Its features make it suitable for industrial automation, uninterruptible power supplies (UPS), and electric vehicle (EV) charging systems. Additionally, it is utilized in welding equipment and various high-power electronic applications that require efficient switching and thermal performance.
Package
The IKW30N65ES5 is typically available in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting on heatsinks.
