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IMZA65R048M1H
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FabricanteTecnologias Infineon
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Peça do Fabricante #IMZA65R048M1H
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
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Description
The IMZA65R048M1H is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It belongs to the Infineon’s CoolMOS™ series, characterized by high efficiency and low switching losses. This particular model has a voltage rating of 650V and a drain current rating of 65A, making it suitable for various applications, including power supplies, DC-DC converters, and industrial motor drives.
Key features of the IMZA65R048M1H include a low on-resistance, which contributes to reduced conduction losses, and enhanced thermal performance, facilitating efficient heat dissipation. Its fast switching speed enables higher frequency operation, improving overall system efficiency. Additionally, it is optimized for both hard and soft switching applications, making it versatile for different circuit topologies.
The package design ensures easy integration into circuits, while its robust performance characteristics make it a reliable choice for modern power management solutions. Overall, the IMZA65R048M1H is an effective solution for engineers looking to enhance the efficiency of power electronic systems.
Key features of the IMZA65R048M1H include a low on-resistance, which contributes to reduced conduction losses, and enhanced thermal performance, facilitating efficient heat dissipation. Its fast switching speed enables higher frequency operation, improving overall system efficiency. Additionally, it is optimized for both hard and soft switching applications, making it versatile for different circuit topologies.
The package design ensures easy integration into circuits, while its robust performance characteristics make it a reliable choice for modern power management solutions. Overall, the IMZA65R048M1H is an effective solution for engineers looking to enhance the efficiency of power electronic systems.
Equivalent
The IMZA65R048M1H is a high-performance IGBT module. Equivalent products include the Infineon FZ1200R12KF4, Mitsubishi CM600HA-24H, and the ON Semiconductor MBRF30100PT. Always verify specifications like voltage, current ratings, and package types for compatibility.
Features
The IMZA65R048M1H is a high-performance MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 48V.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 65A, making it suitable for high-current applications.
3. Low R_DS(on): It offers a low on-resistance, typically around 8.5 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications in switching power supplies and converters.
5. DPAK Package: The device comes in a DPAK package, facilitating easy mounting and heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage is low, allowing for efficient drive with standard control voltages.
These features make the IMZA65R048M1H suitable for various applications including DC-DC converters, motor drives, and power management circuits.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 48V.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 65A, making it suitable for high-current applications.
3. Low R_DS(on): It offers a low on-resistance, typically around 8.5 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications in switching power supplies and converters.
5. DPAK Package: The device comes in a DPAK package, facilitating easy mounting and heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage is low, allowing for efficient drive with standard control voltages.
These features make the IMZA65R048M1H suitable for various applications including DC-DC converters, motor drives, and power management circuits.
Pinout
The IMZA65R048M1H is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the device; it is connected to the load in a typical application.
3. Source (S): This pin serves as the exit for the current, connecting to ground or the negative side of the power supply in a typical setup.
The IMZA65R048M1H is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management in various electronic devices.
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the device; it is connected to the load in a typical application.
3. Source (S): This pin serves as the exit for the current, connecting to ground or the negative side of the power supply in a typical setup.
The IMZA65R048M1H is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management in various electronic devices.
Manufacturer
The IMZA65R048M1H is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial, and communications sectors. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, contributing to advancements in energy efficiency and the Internet of Things (IoT). Infineon operates globally and is recognized for its commitment to sustainability and technology leadership, focusing on smart mobility, energy efficiency, and security solutions.
Application
The IMZA65R048M1H is a high-performance MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Used in step-down (buck) converters for efficient voltage regulation.
2. Power Supplies: Suitable for industrial, telecommunications, and consumer electronics power supplies.
3. Motor Drives: Employed in electric motor control for various applications.
4. Server and Data Center Power: Optimizes power delivery in server systems.
5. Renewable Energy Systems: Applied in solar inverters and energy storage solutions.
Its low on-resistance and high efficiency make it ideal for these applications.
1. DC-DC Converters: Used in step-down (buck) converters for efficient voltage regulation.
2. Power Supplies: Suitable for industrial, telecommunications, and consumer electronics power supplies.
3. Motor Drives: Employed in electric motor control for various applications.
4. Server and Data Center Power: Optimizes power delivery in server systems.
5. Renewable Energy Systems: Applied in solar inverters and energy storage solutions.
Its low on-resistance and high efficiency make it ideal for these applications.
Package
The IMZA65R048M1H is packaged in a DPAK (TO-252) form factor. This package type is designed for surface mounting and provides good thermal performance and electrical characteristics, suitable for power electronic applications.
