IPB020N10N5

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IPB020N10N5

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MOSFETs N-Ch 100V 120A D2PAK-2

  • FabricanteTecnologias Infineon

  • Peça do Fabricante #IPB020N10N5

  • Ficha Técnica IPB020N10N5 DataSheet

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Especificações

Atributo Valor
Packaging MouseReel
StandardPackQty 1000

Visão Geral

Description

IPB020N10N5 is a part number for a specific type of Insulated Gate Bipolar Transistor (IGBT) module. IGBTs are semiconductor devices commonly used in power electronics to switch electric power in many modern appliances, from automotive applications to renewable energy systems and industrial motor drives.
This particular module, often produced by manufacturers like Infineon or others, is designed to handle high voltage and current levels efficiently. It combines the high-efficiency characteristics of a MOSFET with the high-current and low-saturation-voltage capabilities of a bipolar transistor, making it ideal for high-power applications.
Key features typically include:
1. High Current Capacity: Suitable for devices that require robust power handling.
2. Low Saturation Voltage: Ensures efficient operation with minimal power loss.
3. Fast Switching Speed: Ideal for high-frequency applications, improving efficiency.
4. Rugged Design: Provides durability under harsh operating conditions.
5. Thermal Management: Often includes features for effective heat dissipation to maintain performance.
This type of IGBT module is crucial in applications requiring efficient and reliable power management.

Equivalent

The IPB020N10N5 is an N-channel MOSFET from Infineon's OptiMOS series, commonly used in power applications. Equivalent or similar products could include:
1. IRLB3034 from Infineon/IRF
2. FDBL86561_F085 from onsemi
3. NTBFD4955 from onsemi
4. FDP020N06 from onsemi
Note that while these may serve similar roles, exact matches for specifications like voltage, current rating, and Rds(on) need to be verified in datasheets for compatibility.

Features

The IPB020N10N5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies, designed for use in various electronic applications requiring efficient power management. Key features include:
1. Voltage and Current Ratings: It typically offers a drain-source voltage (V_DS) of 100V, and a continuous drain current (I_D) that can vary based on the specific application and cooling conditions.
2. R_DS(on) Specification: Known for a low on-state resistance, R_DS(on), which reduces power loss and improves efficiency during operation.
3. N-Channel Configuration: This MOSFET utilizes an N-channel design, which generally provides faster switching speeds compared to P-channel counterparts.
4. Package Type: Often available in standard TO-220 or other similar packages that facilitate easy mounting and heat dissipation.
5. Application Areas: Commonly used in power switching applications, DC-DC converters, motor control circuits, and power management systems.
6. Thermal Characteristics: Designed to handle substantial power loads with efficient thermal management, crucial for high-performance scenarios.
These features make the IPB020N10N5 a versatile component in various electronic circuits requiring effective power handling and efficiency.

Pinout

The IPB020N10N5 is a power MOSFET manufactured by Infineon Technologies. It is part of the OptiMOS™ 5 series and is designed for use in applications requiring high efficiency and reliability. The MOSFET comes in a TO-263-3 package, which typically features 3 pins. Here is a brief overview of its pin count and function:
1. Pin Count:
- The IPB020N10N5 has 3 pins.
2. Pin Functions:
- Pin 1 (Gate): This pin receives the input voltage signal to control the MOSFET's operation, turning it on or off.
- Pin 2 (Drain): This pin is connected to the load, and it is where the main current flows out when the MOSFET is on.
- Pin 3 (Source): This pin is connected to the ground or the negative side of the power supply, serving as the return path for the current when the MOSFET is conducting.
This MOSFET is typically used in applications like DC-DC converters, motor drives, and power management systems due to its low on-resistance and high current handling capabilities.

Manufacturer

The IPB020N10N5 is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that specializes in designing, developing, and manufacturing a wide range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial power control, power management, and digital security. Infineon is known for its innovation in power semiconductors, microcontrollers, sensors, and security solutions, providing products that enhance energy efficiency, mobility, and security across different sectors.

Application

The IPB020N10N5 is a N-channel MOSFET widely used in applications requiring efficient power management and high-speed switching. Typical areas include:
1. Power Supplies: Used in DC-DC converters and switched-mode power supplies for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. Battery Management: Plays a role in battery protection and management systems for balancing and efficiency.
4. Load Switching: Employed in applications requiring effective load control and switching.
5. Inverters: Utilized in solar inverters and UPS systems for energy conversion processes.
6. Consumer Electronics: Found in devices requiring compact and efficient power control solutions.
These applications benefit from its low on-resistance and fast switching speed.

Package

The IPB020N10N5 is a MOSFET from Infineon Technologies, and it comes in a TO-263 package, also known as D2PAK.

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