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IPB072N15N3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TO-263-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 7.2mΩ@10V,100A |
| DraintoSourceVoltage | 150V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 10pF@75V |
| InputCapacitance(Ciss@Vds) | 5.47nF@75V |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| GateCharge(Qg) | 93nC@10V |
| Number | 1 N-channel |
Visão Geral
Description
The IPB072N15N3G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications. It features a maximum drain-source voltage (VDS) of 150V and a continuous drain current (ID) of 72A, making it suitable for high-voltage and high-current applications like power supplies, motor drives, and DC-DC converters.
Key specifications include a low RDS(on) value, which minimizes conduction losses and enhances efficiency. The device also has a fast switching speed, beneficial for high-frequency applications. Its package type usually is a TO-220 or similar, which allows for effective heat dissipation.
The IPB072N15N3G is often used in automotive, industrial, and consumer electronics where reliability and performance are critical. When designing circuits with this MOSFET, it's essential to consider thermal management and proper gate drive to ensure optimal operation.
Key specifications include a low RDS(on) value, which minimizes conduction losses and enhances efficiency. The device also has a fast switching speed, beneficial for high-frequency applications. Its package type usually is a TO-220 or similar, which allows for effective heat dissipation.
The IPB072N15N3G is often used in automotive, industrial, and consumer electronics where reliability and performance are critical. When designing circuits with this MOSFET, it's essential to consider thermal management and proper gate drive to ensure optimal operation.
Equivalent
The IPB072N15N3G is an N-channel MOSFET from Infineon, typically used in power management applications. Equivalent products can include the IRF3205 from Infineon, the BSC090N15 from Siemens, and the STP75NF75 from STMicroelectronics. Always verify specifications such as voltage, current ratings, and RDS(on) when considering alternatives.
Features
The IPB072N15N3G is an N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing it to handle high voltages.
2. Current Rating: The continuous drain current (I_D) is rated at 72A, making it suitable for high-current applications.
3. R_DS(on): The on-resistance is low, typically around 0.072 ohms, which helps reduce power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive from low-voltage logic.
5. Package: It comes in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Applications: It is ideal for use in DC-DC converters, motor drives, and other high-efficiency power management systems.
Overall, the IPB072N15N3G is a robust MOSFET suitable for demanding power applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing it to handle high voltages.
2. Current Rating: The continuous drain current (I_D) is rated at 72A, making it suitable for high-current applications.
3. R_DS(on): The on-resistance is low, typically around 0.072 ohms, which helps reduce power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive from low-voltage logic.
5. Package: It comes in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Applications: It is ideal for use in DC-DC converters, motor drives, and other high-efficiency power management systems.
Overall, the IPB072N15N3G is a robust MOSFET suitable for demanding power applications.
Pinout
The IPB072N15N3G is an N-channel MOSFET from Infineon's CoolMOS series, designed for high efficiency in power applications. It features a TO-220 package with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The drain pin is where the load is connected and where the current exits the MOSFET when it is in the "on" state.
3. Source (S) - This pin connects to ground or the negative side of the circuit, allowing current to flow into the drain when the gate is activated.
The IPB072N15N3G is suitable for applications like power management, motor control, and DC-DC converters, providing low on-resistance and high-speed switching capabilities.
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The drain pin is where the load is connected and where the current exits the MOSFET when it is in the "on" state.
3. Source (S) - This pin connects to ground or the negative side of the circuit, allowing current to flow into the drain when the gate is activated.
The IPB072N15N3G is suitable for applications like power management, motor control, and DC-DC converters, providing low on-resistance and high-speed switching capabilities.
Manufacturer
The IPB072N15N3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing, developing, manufacturing, and supplying a wide range of semiconductor solutions. Infineon’s product portfolio includes power semiconductors, microcontrollers, sensors, and automotive solutions, catering to various industries such as automotive, industrial, and consumer electronics.
Infineon is particularly known for its expertise in power management and energy efficiency, serving as a key player in the development of technologies for smart mobility, IoT, and renewable energy applications. The company emphasizes innovation and sustainability, contributing to advancements in electronic systems that improve energy efficiency and reduce carbon footprints. Infineon operates globally, with a strong presence in Europe, Asia, and North America, and it is recognized for its commitment to quality and reliability in the semiconductor industry.
Infineon is particularly known for its expertise in power management and energy efficiency, serving as a key player in the development of technologies for smart mobility, IoT, and renewable energy applications. The company emphasizes innovation and sustainability, contributing to advancements in electronic systems that improve energy efficiency and reduce carbon footprints. Infineon operates globally, with a strong presence in Europe, Asia, and North America, and it is recognized for its commitment to quality and reliability in the semiconductor industry.
Application
The IPB072N15N3G is an N-channel MOSFET designed for applications requiring efficient power management. Its key application areas include:
1. Switching Regulators: Used in DC-DC converters for efficient voltage regulation.
2. Motor Control: Employed in driving motors in electric vehicles and robotics.
3. Power Supplies: Utilized in high-efficiency power supply designs.
4. Battery Management Systems: Used for protecting and managing lithium-ion batteries.
5. LED Drivers: Applied in driving LED lighting systems efficiently.
The MOSFET's low on-resistance and fast switching capabilities make it suitable for these high-performance applications.
1. Switching Regulators: Used in DC-DC converters for efficient voltage regulation.
2. Motor Control: Employed in driving motors in electric vehicles and robotics.
3. Power Supplies: Utilized in high-efficiency power supply designs.
4. Battery Management Systems: Used for protecting and managing lithium-ion batteries.
5. LED Drivers: Applied in driving LED lighting systems efficiently.
The MOSFET's low on-resistance and fast switching capabilities make it suitable for these high-performance applications.
Package
The IPB072N15N3G is packaged in a TO-220 form factor, which is a popular type of package for power MOSFETs, allowing for efficient heat dissipation and easy mounting on heat sinks.
