IPB120N04S4L-02

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IPB120N04S4L-02

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Especificações

Atributo Valor
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Technology Si
Mounting Type SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.139332 oz

Visão Geral

Description

The IPB120N04S4L-02 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, enabling efficient conduction and reduced power loss. With a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) rating of 120A, this device is suitable for various applications including DC-DC converters, motor drives, and power supplies.
The MOSFET utilizes advanced technology to ensure fast switching speeds, making it ideal for high-frequency applications. Its robust thermal performance allows for effective heat dissipation, further enhancing reliability. The package typically comes in a TO-220 or similar form factor, facilitating easy integration into circuit designs.
Overall, the IPB120N04S4L-02 is a versatile component that meets the demands of modern power electronic systems, providing efficiency, reliability, and ease of use in high-power applications.

Equivalent

The IPB120N04S4L-02 is a N-channel MOSFET. Equivalent products include the IRF3205, FDS6672, and STP120N04L. Ensure to compare parameters like Rds(on), Vds, and gate charge for compatibility in specific applications. Always consult datasheets for precise specifications.

Features

The IPB120N04S4L-02 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 40V maximum drain-source voltage (VDS), suitable for low to medium voltage applications.
2. Current Handling: Capable of handling up to 120A for efficient load management.
3. RDS(on): Low on-resistance (typically around 4.4 mΩ), which minimizes power loss and enhances thermal performance.
4. Fast Switching: Designed for high-speed switching capabilities, making it ideal for applications like power supplies and motor drives.
5. Gate Threshold Voltage: Low gate threshold voltage allows for easier drive and compatibility with various control circuits.
6. Package: Available in a TO-220 package for excellent thermal dissipation.
7. Applications: Suitable for DC-DC converters, power management systems, and automotive applications.
Overall, the IPB120N04S4L-02 combines robust performance with efficiency, making it a versatile choice for modern electronic designs.

Pinout

The IPB120N04S4L-02 is an N-channel MOSFET, specifically designed for high-performance applications. It typically comes in a TO-220 package with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the load current enters the MOSFET. It connects to the load or power supply.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, allowing current to exit the MOSFET.
This device is known for its low on-resistance and high-speed switching capabilities, making it suitable for applications like power management and motor control. Always refer to the manufacturer's datasheet for detailed specifications and ratings.

Manufacturer

The IPB120N04S4L-02 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in semiconductor solutions for automotive, industrial, and multimarket applications. Infineon focuses on areas such as power management, sensor technologies, and security solutions, catering to various industries including automotive, industrial automation, renewable energy, and consumer electronics.
The company is known for its innovation in power semiconductors, particularly in the areas of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are critical for efficient power management in electronic devices. Infineon plays a significant role in the transition to energy-efficient technologies and the development of solutions for electric vehicles and smart grids. With a strong emphasis on research and development, the company aims to drive advancements in technology while contributing to sustainability and environmental responsibility.

Application

The IPB120N04S4L-02 is an N-channel MOSFET designed for high-efficiency power applications. Its primary application areas include:
1. Switching Power Supplies: Used in DC-DC converters and power management circuits.
2. Motor Control: Employed in driving brushless DC motors and industrial motor controllers.
3. LED Drivers: Utilized in high-power LED lighting applications.
4. Telecommunications: Implemented in power amplifiers and RF power supplies.
5. Automotive: Applied in electric vehicle systems and battery management.
Its low RDS(on) enables energy-efficient operation in these applications.

Package

The IPB120N04S4L-02 is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and easy mounting for various applications in power electronics.

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