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IPB200N25N3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TO-263-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 20mΩ@10V,64A |
| DraintoSourceVoltage | 250V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 64A |
| ReverseTransferCapacitance(Crss@Vds) | 395pF |
| InputCapacitance(Ciss@Vds) | 7.1nF |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| GateCharge(Qg) | 64nC@10V |
| Number | 1 N-channel |
Visão Geral
Description
The IPB200N25N3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the Infineon’s 25V N-channel MOSFET family and is characterized by its low on-resistance (R_DS(on)), which minimizes power losses during operation. With a maximum continuous drain current of 200A, it is suitable for high-current applications, such as power supplies, motor drives, and converters.
Key features include a low gate charge (Q_g) for efficient switching, making it ideal for high-frequency applications. The device is housed in a TO-220 package, providing good thermal performance and ease of mounting.
The IPB200N25N3G is often used in automotive, industrial, and consumer electronics applications where efficient power management is crucial. Its robust performance and reliability make it a preferred choice among engineers looking to enhance system efficiency and thermal management in their designs.
Key features include a low gate charge (Q_g) for efficient switching, making it ideal for high-frequency applications. The device is housed in a TO-220 package, providing good thermal performance and ease of mounting.
The IPB200N25N3G is often used in automotive, industrial, and consumer electronics applications where efficient power management is crucial. Its robust performance and reliability make it a preferred choice among engineers looking to enhance system efficiency and thermal management in their designs.
Equivalent
The IPB200N25N3G is an N-channel MOSFET from Infineon, typically used in power applications. Equivalent products include the IRF3205 from Infineon, the STP200N25 from STMicroelectronics, and the BSC200N25NS3 from Infineon. Always verify specifications like voltage, current ratings, and RDS(on) for compatibility in specific applications.
Features
The IPB200N25N3G is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 200A, allowing it to manage significant loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) typically around 0.14 ohms, which minimizes power losses during operation.
4. Gate Charge: The gate charge (Q_g) is low, facilitating faster switching speeds and improved efficiency.
5. Thermal Resistance: It has good thermal performance, with a low thermal resistance junction-to-case (R_thJC), allowing for better heat dissipation.
6. Package: The MOSFET is available in a TO-220 package, which is suitable for heat sinking and provides robust mechanical support.
7. Applications: Ideal for use in power supplies, motor drives, and other high-efficiency power management systems.
This combination of features makes the IPB200N25N3G suitable for various demanding applications.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 200A, allowing it to manage significant loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) typically around 0.14 ohms, which minimizes power losses during operation.
4. Gate Charge: The gate charge (Q_g) is low, facilitating faster switching speeds and improved efficiency.
5. Thermal Resistance: It has good thermal performance, with a low thermal resistance junction-to-case (R_thJC), allowing for better heat dissipation.
6. Package: The MOSFET is available in a TO-220 package, which is suitable for heat sinking and provides robust mechanical support.
7. Applications: Ideal for use in power supplies, motor drives, and other high-efficiency power management systems.
This combination of features makes the IPB200N25N3G suitable for various demanding applications.
Pinout
The IPB200N25N3G is a N-channel MOSFET from Infineon Technologies, specifically designed for power applications. It has a total of 3 pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET and is responsible for turning it on and off. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load connects. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the terminal connected to the ground or the negative side of the power supply. Current flows out from the source when the device is active.
The IPB200N25N3G is typically used in applications such as motor drives, power supplies, and other high-efficiency switching applications.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET and is responsible for turning it on and off. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load connects. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the terminal connected to the ground or the negative side of the power supply. Current flows out from the source when the device is active.
The IPB200N25N3G is typically used in applications such as motor drives, power supplies, and other high-efficiency switching applications.
Manufacturer
The IPB200N25N3G is manufactured by Infineon Technologies AG. Founded in 1999, Infineon is a leading global semiconductor manufacturer based in Germany. The company specializes in designing and producing a wide range of semiconductor and system solutions, focusing on sectors such as automotive, industrial power control, and security technology.
Infineon is known for its innovations in power management and efficiency, particularly in the development of power MOSFETs, IGBTs, and other power semiconductor devices. The IPB200N25N3G is a specific type of N-channel MOSFET that is designed for applications requiring high efficiency and performance, making it suitable for use in power supplies, motor drives, and other electronic systems.
With a strong emphasis on sustainability and innovation, Infineon plays a key role in advancing technologies that support energy efficiency and the development of electric vehicles, smart grids, and renewable energy solutions. Overall, Infineon Technologies AG is recognized for its commitment to providing high-quality semiconductor solutions that meet the evolving demands of various industries.
Infineon is known for its innovations in power management and efficiency, particularly in the development of power MOSFETs, IGBTs, and other power semiconductor devices. The IPB200N25N3G is a specific type of N-channel MOSFET that is designed for applications requiring high efficiency and performance, making it suitable for use in power supplies, motor drives, and other electronic systems.
With a strong emphasis on sustainability and innovation, Infineon plays a key role in advancing technologies that support energy efficiency and the development of electric vehicles, smart grids, and renewable energy solutions. Overall, Infineon Technologies AG is recognized for its commitment to providing high-quality semiconductor solutions that meet the evolving demands of various industries.
Application
The IPB200N25N3G is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in driving motors in industrial automation, electric vehicles, and robotics.
3. DC-DC Converters: Utilized in step-down and step-up converters for battery management systems.
4. Inverters: Applied in renewable energy systems, such as solar inverters.
5. LED Drivers: Used in lighting applications for efficient current regulation.
6. Audio Amplifiers: Incorporated in Class D amplifiers for enhanced performance.
Its high efficiency and fast switching capabilities make it suitable for these areas.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in driving motors in industrial automation, electric vehicles, and robotics.
3. DC-DC Converters: Utilized in step-down and step-up converters for battery management systems.
4. Inverters: Applied in renewable energy systems, such as solar inverters.
5. LED Drivers: Used in lighting applications for efficient current regulation.
6. Audio Amplifiers: Incorporated in Class D amplifiers for enhanced performance.
Its high efficiency and fast switching capabilities make it suitable for these areas.
Package
The IPB200N25N3G is packaged in a TO-220 form factor. This package type provides good thermal performance and is suitable for applications requiring high-power handling and efficient heat dissipation.
