IPB60R099P7

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IPB60R099P7

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  • FabricanteTecnologias Infineon

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Especificações

Atributo Valor
Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors

Visão Geral

Description

The IPB60R099P7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by Infineon Technologies, this N-channel MOSFET features a low on-resistance (RDS(on)) of 0.099 ohms, allowing for reduced power loss and improved thermal performance. It is rated for a maximum drain-source voltage (VDS) of 60V and can handle continuous drain currents up to 90A, making it suitable for various high-power applications, including power supplies, motor drives, and battery management systems.
The device is housed in a TO-220 package, which facilitates efficient heat dissipation, important for maintaining performance in demanding environments. Its fast switching capabilities and low gate charge (Qg) enable rapid operation, contributing to overall system efficiency. Overall, the IPB60R099P7 is a versatile and efficient choice for designers seeking reliable performance in power electronics applications.

Equivalent

The IPB60R099P7 is a N-channel MOSFET. Equivalent products include the IRF540, STP60NF06, and BS170. When selecting equivalents, ensure they match key specifications such as voltage rating, current rating, RDS(on), and package type. Always verify compatibility with your specific application requirements.

Features

The IPB60R099P7 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 60V maximum drain-source voltage (Vds).
2. Current Rating: Capable of handling up to 90A continuous drain current (Id) at a specified temperature.
3. RDS(on): Low on-resistance of 0.099 ohms ensures efficient conduction and minimizes power loss.
4. Gate Threshold Voltage: Typically around 2-4V, allowing for easy activation with low gate drive voltages.
5. Package Type: Available in a TO-220 package that facilitates heat dissipation, suitable for power applications.
6. Thermal Resistance: Low thermal resistance value enhances performance in high-power applications.
7. Fast Switching: Designed for high-speed switching, making it ideal for converters and inverters.
These features make the IPB60R099P7 suitable for various applications, including power supplies, motor drives, and DC-DC converters.

Pinout

The IPB60R099P7 is an N-channel MOSFET from Infineon Technologies, designed for applications in power electronics. It features a TO-220 package with a pin count of three.
The pin functions are as follows:
- Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate enables or disables the conduction between the drain and source.
- Drain (D): This is the output pin where the load is connected. The drain is where the current flows out of the MOSFET when it is turned on.
- Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the voltage applied at the gate.
The IPB60R099P7 is known for its low on-resistance, making it suitable for high-efficiency applications in power management and switching.

Manufacturer

The IPB60R099P7 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in a wide range of semiconductor solutions including power semiconductors, sensors, and microcontrollers. The company operates in various sectors such as automotive, industrial power control, power management, and security technologies.
Infineon is recognized for its focus on innovation and sustainability, aiming to contribute to energy efficiency and the development of smart technologies. Its products are widely used in applications ranging from electric vehicles and renewable energy systems to consumer electronics and industrial automation. With a strong emphasis on research and development, Infineon plays a significant role in advancing semiconductor technology and enabling smarter, more efficient solutions across multiple industries.

Application

The IPB60R099P7 is an N-channel MOSFET primarily used in applications such as:
1. DC-DC Converters: For efficient power conversion in various electronic devices.
2. Motor Control: Used in motor drivers for efficient operation in industrial and consumer applications.
3. Power Management: In power supply units and battery management systems for managing power distribution.
4. Switching Applications: Suitable for high-speed switching in electronic circuits.
5. Audio Amplifiers: Employed in audio power amplifiers for improved efficiency and performance.
Its low on-resistance and high current handling make it ideal for these applications.

Package

The IPB60R099P7 is packaged in a TO-247 housing. This package type is designed for high-power applications, providing effective thermal management and ease of mounting in various electronic circuits.

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