IPB60R360P7ATMA1

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IPB60R360P7ATMA1

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MOSFET N-CH 600V 9A D2PAK

  • FabricanteTecnologias Infineon

  • Peça do Fabricante #IPB60R360P7ATMA1

  • Em Estoque5638

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Especificações

Atributo Valor
Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™ P7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 360mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id 4V @ 140µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 555 pF @ 400 V
PowerDissipation(Max) 41W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

Visão Geral

Description

IPB60R360P7ATMA1 is Infineon’s 600 V, 360 A high-power reverse-conducting IGBT (RC-IGBT). It integrates an IGBT switch with a built-in reverse diode, allowing bidirectional current flow in a single device—ideal for motor drives and inverters. Built with trench-gate technology for lower on-state losses and robust short-circuit performance, it comes in a P7 package for surface mounting and good thermal management. Typical gate drive is around 15 V. Applications include industrial motor drives, solar inverters, power supplies, and other high-power switching systems that require compact, efficient operation.

Features

Here are the typical features of the IPB60R360P7ATMA1 power IGBT module (Infineon):
- 600 V class blocking voltage
- High current capability (around 360 A class per module)
- Dual IGBTs with integrated anti-parallel diodes (half-bridge configuration)
- Isolated, thermally conductive baseplate for easy heat-sinking
- Compact ATMA1 package designed for inverter/motor-drive applications
- Optimized for high switching efficiency and low conduction losses
- Suitable for PWM inverter drives, motors, and industrial drives
- RoHS-compliant and designed for robust, reliable operation in harsh environments
Note: exact electrical ratings (voltage, current, switching speeds, Isd/voltage isolation, tSC, etc.) are best taken from the official datasheet for precise numbers.

Pinout

Pin count: 7 pins.
Function: A dual IGBT power module (two IGBTs with anti-parallel diodes) used as a high-current half-bridge for inverter/motor-drive applications. It provides two gate inputs (one for each transistor) and the corresponding power/return terminals (emitter/collector connections) as specified in the datasheet.

Manufacturer

Manufacturer: Infineon Technologies AG.
What kind of company: A German global semiconductor company that designs and manufactures energy-efficient power semiconductors, IGBT modules, and related system solutions for automotive, industrial, and security markets.

Application

IPB60R360P7ATMA1 is an intelligent power module (IGBT+diodes) designed for high-current motor drive and power-conversion. Typical application areas:
- Three-phase motor drives (BLDC/PMSM/AC induction) in industrial automation, robotics, CNCs, conveyors
- Appliance/machine motor control (washing machines, refrigerators, HVAC fans/compressors, pumps)
- Compact inverters for renewable-energy systems and general high-current power conversion requiring integrated protection and gate drive
In short: high-current, space-efficient motor drives and power converters.

Package

The IPB60R360P7ATMA1 is supplied in a TO‑247‑3 (three‑lead TO‑247) through‑hole power package.

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