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IPC100N04S5L-1R5
+Lista de MateriaisMOSFETs MOSFET_(20V 40V)
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FabricanteInfineon / IR
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Peça do Fabricante #IPC100N04S5L-1R5
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Ficha Técnica IPC100N04S5L-1R5 DataSheet
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Especificações
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| Packaging | Reel |
Visão Geral
Description
Key features of the IPC100N04S5L-1R5 include its high-speed switching capability and low on-resistance, which contribute to reduced power loss and improved efficiency in electronic circuits. The device is often used in circuits where fast switching and low power dissipation are essential. Additionally, the MOSFET's robust design provides reliability and durability in demanding environments.
This component may be encased in a standard TO-220 or TO-247 package, which facilitates easy mounting on circuit boards and effective heat dissipation. Overall, the IPC100N04S5L-1R5 is a reliable choice for engineers and designers working on high-performance electronic systems.
Equivalent
Features
1. Voltage and Current Ratings: It boasts a drain-source voltage (V_ds) of 40V and a continuous drain current (I_d) of 100A, making it suitable for medium-power applications.
2. Low On-Resistance: This MOSFET is characterized by a low on-resistance (R_ds(on)), enhancing its efficiency by minimizing power loss during operation.
3. Fast Switching: Designed for fast switching speeds, it improves the performance of circuits in power management applications.
4. Thermal Performance: It offers good thermal performance, allowing for efficient heat dissipation and reliable operation under high current loads.
5. Package: Typically housed in a compact, thermally efficient package, suitable for space-constrained designs.
6. Applications: Commonly used in power supply circuits, motor controls, and inverter systems due to its robust performance.
These attributes make the IPC100N04S5L-1R5 a reliable choice for designers seeking efficiency and performance in power electronic systems.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is where the load current enters the MOSFET. It is one of the main current-carrying terminals.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is the other main current-carrying terminal.
This particular model is designed for low voltage applications and features low on-state resistance, making it suitable for high-efficiency power management. The exact characteristics, like voltage and current ratings, should be confirmed from the datasheet for detailed specifications and recommended usage.