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IPD082N10N3G
+Lista de MateriaisMOSFET N-CH 100V 80A DPAK
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 73A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Visão Geral
Description
The IPD082N10N3G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a low on-resistance (RDS(on)) of 8.2 mΩ, allowing efficient power management and minimal energy loss during operation. Its maximum drain-source voltage (VDS) is 100V, making it suitable for various high-voltage applications.
This MOSFET is engineered for fast switching speeds, which enhances its performance in power supply circuits, motor drives, and other switching applications. The device is packaged in a compact DPAK format, facilitating easy integration into printed circuit boards (PCBs).
The IPD082N10N3G also boasts a high current handling capacity, typically around 82A, which provides flexibility in design for demanding applications. It supports a wide temperature range, ensuring reliable operation under diverse conditions. Overall, the IPD082N10N3G is a versatile component ideal for use in power electronics, automotive systems, and renewable energy applications.
This MOSFET is engineered for fast switching speeds, which enhances its performance in power supply circuits, motor drives, and other switching applications. The device is packaged in a compact DPAK format, facilitating easy integration into printed circuit boards (PCBs).
The IPD082N10N3G also boasts a high current handling capacity, typically around 82A, which provides flexibility in design for demanding applications. It supports a wide temperature range, ensuring reliable operation under diverse conditions. Overall, the IPD082N10N3G is a versatile component ideal for use in power electronics, automotive systems, and renewable energy applications.
Equivalent
The IPD082N10N3G is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF3205, STP75NF10, and BUK7YNS-50. These devices share similar specifications in terms of voltage ratings, current capabilities, and Rds(on) values. Always verify specific datasheets for exact match in performance requirements for your application.
Features
The IPD082N10N3G is an N-channel MOSFET designed for high efficiency and high-speed applications. Key features include:
1. Voltage Rating: 100V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of up to 82A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance of approximately 8.2 mΩ, reducing conduction losses and improving efficiency.
4. Thermal Performance: Enhanced thermal characteristics with a junction-to-case thermal resistance (R θJC) of about 0.5 °C/W, enabling better heat dissipation.
5. Package: Available in a DPAK package, which provides good thermal performance and ease of PCB assembly.
6. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with low-voltage drive signals.
7. Fast Switching: Designed for fast switching applications, making it suitable for use in DC-DC converters, motor drives, and power management systems.
These features make the IPD082N10N3G ideal for various power electronic applications.
1. Voltage Rating: 100V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of up to 82A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance of approximately 8.2 mΩ, reducing conduction losses and improving efficiency.
4. Thermal Performance: Enhanced thermal characteristics with a junction-to-case thermal resistance (R θJC) of about 0.5 °C/W, enabling better heat dissipation.
5. Package: Available in a DPAK package, which provides good thermal performance and ease of PCB assembly.
6. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with low-voltage drive signals.
7. Fast Switching: Designed for fast switching applications, making it suitable for use in DC-DC converters, motor drives, and power management systems.
These features make the IPD082N10N3G ideal for various power electronic applications.
Pinout
The IPD082N10N3G is an N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This is the terminal through which current enters the MOSFET. It is typically connected to the ground in low-side switching configurations.
The IPD082N10N3G is designed for high-efficiency power applications, offering low on-resistance and fast switching speeds, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This is the terminal through which current enters the MOSFET. It is typically connected to the ground in low-side switching configurations.
The IPD082N10N3G is designed for high-efficiency power applications, offering low on-resistance and fast switching speeds, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IPD082N10N3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, known for producing a wide range of products including power semiconductors, microcontrollers, sensors, and security solutions. The company focuses on various sectors such as automotive, industrial power control, and digital security, providing innovative solutions that enhance energy efficiency and connectivity. Infineon is recognized for its commitment to technology advancement and sustainability, playing a significant role in the development of smart devices and energy-efficient systems.
Application
The IPD082N10N3G is a high-performance N-channel MOSFET designed for various applications, primarily in power management. Its main application areas include:
1. Switching Regulators: Used in DC-DC converters for efficient power conversion.
2. Motor Drives: Suitable for driving brushed and brushless motors in automotive and industrial applications.
3. Power Supply Circuits: Utilized in high-efficiency power supplies and inverters.
4. Electric Vehicles: Employed in battery management systems and energy conversion.
5. Consumer Electronics: Found in devices requiring efficient power switching.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
1. Switching Regulators: Used in DC-DC converters for efficient power conversion.
2. Motor Drives: Suitable for driving brushed and brushless motors in automotive and industrial applications.
3. Power Supply Circuits: Utilized in high-efficiency power supplies and inverters.
4. Electric Vehicles: Employed in battery management systems and energy conversion.
5. Consumer Electronics: Found in devices requiring efficient power switching.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
Package
The IPD082N10N3G is packaged in a TO-220 type, which features a metal tab for heat dissipation and is commonly used for high-power applications.
