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IPD200N15N3G
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FabricanteInfineon Technologies AG
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Peça do Fabricante #IPD200N15N3G
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Especificações
| Atributo | Valor |
| EU Ro HS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| HTS | 8541.29.00.75 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | OptiMOS 3 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 50 |
| Maximum Drain Source Resistance (M Ohm) | 20@10V |
| Typical Gate Charge @ Vgs (n C) | 23@10V |
| Typical Gate Charge @ 10 V (n C) | 23 |
| Typical Input Capacitance @ Vds (p F) | 1820@75V |
| Maximum Power Dissipation (m W) | 150000 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 11 |
| Typical Turn - Off Delay Time (ns) | 23 |
| Typical Turn - On Delay Time (ns) | 14 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Mounting Type | Surface Mount |
| Package Height | 2.3 |
| Package Width | 6.22 |
| Package Length | 6.5 |
| PCB changed | 2 |
| Package / Case | TO-252 |
| Supplier Device Package | DPAK |
| Pin Count | 3 |
| Tab | Tab |
Visão Geral
Description
The IPD200N15N3G is a part of Infineon’s family of power MOSFETs designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 150V and a continuous drain current (ID) of 200A, making it suitable for various power management tasks in industrial and automotive applications. The device utilizes a trench technology structure, which enhances its efficiency and reduces on-resistance (RDS(on)), allowing for lower power losses during operation. This MOSFET is particularly valuable in applications like switch-mode power supplies (SMPS), electric vehicles, and renewable energy systems. Its robust thermal performance and fast switching capabilities contribute to overall system reliability and efficiency. The IPD200N15N3G also incorporates a low gate charge, enabling high-frequency operation, which is critical for modern power electronics. Overall, it represents a reliable choice for engineers seeking high-efficiency solutions in demanding environments.
Equivalent
The IPD200N15N3G is an N-channel MOSFET typically used in power applications. Equivalent products include the STP200N15F6 from STMicroelectronics, the IRF200N15 from Infineon, and the BSC200N15 from Nexperia. Always verify specifications like voltage, current rating, and thermal performance to ensure compatibility in your application.
Features
The IPD200N15N3G is a N-channel Power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 150V, suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) up to 200A, allowing for substantial power handling.
3. R_DS(on): Low on-resistance (typically around 0.015 ohm), enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ensures effective switching, typically ranging from 2V to 4V.
5. Fast Switching: Optimized for high-speed operation, making it ideal for applications like DC-DC converters and motor drives.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
7. Thermal Performance: Enhanced thermal resistance, allowing for reliable operation in demanding environments.
Overall, the IPD200N15N3G is well-suited for automotive, industrial, and power management applications.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 150V, suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) up to 200A, allowing for substantial power handling.
3. R_DS(on): Low on-resistance (typically around 0.015 ohm), enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ensures effective switching, typically ranging from 2V to 4V.
5. Fast Switching: Optimized for high-speed operation, making it ideal for applications like DC-DC converters and motor drives.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
7. Thermal Performance: Enhanced thermal resistance, allowing for reliable operation in demanding environments.
Overall, the IPD200N15N3G is well-suited for automotive, industrial, and power management applications.
Pinout
The IPD200N15N3G is an N-channel MOSFET designed for power applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
The MOSFET is capable of handling high currents and voltages, making it suitable for various applications in power management, converters, and motor control. Its specifications include a maximum drain-source voltage of 150V and a continuous drain current of 200A.
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
The MOSFET is capable of handling high currents and voltages, making it suitable for various applications in power management, converters, and motor control. Its specifications include a maximum drain-source voltage of 150V and a continuous drain current of 200A.
Manufacturer
The IPD200N15N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Established in 1999 as a spin-off from Siemens AG, Infineon has since evolved into a global leader in the semiconductor industry, focusing on innovative technologies that enhance efficiency, performance, and sustainability in electronic systems. The company's products serve various sectors, including automotive, industrial, communications, and consumer electronics. Infineon's commitment to R&D enables them to provide cutting-edge solutions, making them a key player in the ongoing advancement of electronic technologies.
Application
The IPD200N15N3G is a high-performance N-channel MOSFET primarily used in various power management applications. Its key application areas include:
1. Switching Power Supplies: Efficiently regulates voltage and current in power converters.
2. Motor Drivers: Controls electric motors in automotive and industrial applications.
3. DC-DC Converters: Supports power conversion in renewable energy systems and battery management.
4. Power Amplifiers: Enhances signal amplification in RF applications.
5. LED Drivers: Enables efficient driving of LED lighting systems.
Its features include low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.
1. Switching Power Supplies: Efficiently regulates voltage and current in power converters.
2. Motor Drivers: Controls electric motors in automotive and industrial applications.
3. DC-DC Converters: Supports power conversion in renewable energy systems and battery management.
4. Power Amplifiers: Enhances signal amplification in RF applications.
5. LED Drivers: Enables efficient driving of LED lighting systems.
Its features include low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.
Package
The IPD200N15N3G is packaged in a TO-220 format, which is a common package type for power transistors. It features a metal tab for heat dissipation and is designed for easy mounting on heatsinks, making it suitable for high-power applications.
