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IPD30N03S2L-20
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPD30N03S2L-20
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000254466 IPD3N3S2L2XT IPD30N03S2L20ATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 30 A |
| Rds On | 14.5 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 19 nC |
| Pd - Power Dissipation | 60 W |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 19 ns |
| Typical Turn - On Delay Time | 5 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
Visão Geral
Description
The IPD30N03S2L-20 is a N-channel MOSFET designed for power management applications, featuring a low on-resistance and high-speed switching capabilities. With a maximum continuous drain current of 30A and a drain-source voltage rating of 30V, it is suitable for various applications such as DC-DC converters, motor drivers, and power supplies.
This MOSFET is housed in TO-220 packaging, facilitating efficient heat dissipation, which is crucial for high-power applications. The device offers a low R_DS(on) (drain-source on-resistance), enabling reduced power losses and improved efficiency, particularly in switching applications.
Its gate threshold voltage is designed for compatibility with standard logic levels, making it easy to integrate into existing circuits. The IPD30N03S2L-20 also features fast switching speeds, allowing for high-frequency operation. Overall, this MOSFET is an excellent choice for engineers looking for reliable performance in power electronics.
This MOSFET is housed in TO-220 packaging, facilitating efficient heat dissipation, which is crucial for high-power applications. The device offers a low R_DS(on) (drain-source on-resistance), enabling reduced power losses and improved efficiency, particularly in switching applications.
Its gate threshold voltage is designed for compatibility with standard logic levels, making it easy to integrate into existing circuits. The IPD30N03S2L-20 also features fast switching speeds, allowing for high-frequency operation. Overall, this MOSFET is an excellent choice for engineers looking for reliable performance in power electronics.
Equivalent
The IPD30N03S2L-20 is an N-channel MOSFET. Equivalent products include the STP30NF03L, IRF30N03, and FQP30N03. Check specifications such as V_DS, I_D, R_DS(on), and package type for compatibility before substitution. Always consult the datasheets for detailed comparisons.
Features
The IPD30N03S2L-20 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. On-Resistance: The device exhibits a low on-resistance (R_DS(on)), typically around 8.5 mΩ, which enhances efficiency and reduces heat generation.
3. Current Handling: It can handle a continuous drain current (I_D) of up to 30A, making it suitable for high-current applications.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for applications such as DC-DC converters and motor drivers.
5. Package: It is available in a DPAK package, providing good thermal performance and ease of mounting on PCBs.
6. Thermal Resistance: The low thermal resistance ensures effective heat dissipation, enhancing reliability in demanding environments.
These features make the IPD30N03S2L-20 ideal for power management tasks in consumer electronics, automotive systems, and industrial applications.
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. On-Resistance: The device exhibits a low on-resistance (R_DS(on)), typically around 8.5 mΩ, which enhances efficiency and reduces heat generation.
3. Current Handling: It can handle a continuous drain current (I_D) of up to 30A, making it suitable for high-current applications.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for applications such as DC-DC converters and motor drivers.
5. Package: It is available in a DPAK package, providing good thermal performance and ease of mounting on PCBs.
6. Thermal Resistance: The low thermal resistance ensures effective heat dissipation, enhancing reliability in demanding environments.
These features make the IPD30N03S2L-20 ideal for power management tasks in consumer electronics, automotive systems, and industrial applications.
Pinout
The IPD30N03S2L-20 is a N-channel MOSFET with a total of 6 pins. Its functions are as follows:
1. Gate (G): Controls the switching of the MOSFET on and off.
2. Drain (D): The terminal through which the primary current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters the MOSFET.
The pin configuration is typically as follows (when viewing the MOSFET from the top, with the pins facing down):
1. Gate
2. Drain
3. Source
4. Drain
5. Source
6. Gate
This component is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. The IPD30N03S2L-20 is suitable for various applications, including DC-DC converters, motor drivers, and power supplies.
1. Gate (G): Controls the switching of the MOSFET on and off.
2. Drain (D): The terminal through which the primary current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters the MOSFET.
The pin configuration is typically as follows (when viewing the MOSFET from the top, with the pins facing down):
1. Gate
2. Drain
3. Source
4. Drain
5. Source
6. Gate
This component is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. The IPD30N03S2L-20 is suitable for various applications, including DC-DC converters, motor drivers, and power supplies.
Manufacturer
The IPD30N03S2L-20 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power and system-on-chip solutions. The company focuses on various sectors, including automotive, industrial, and consumer electronics. Infineon is recognized for its expertise in power management, automotive safety, and communication technologies. Its products are widely used in applications ranging from electric vehicles to renewable energy systems and advanced industrial automation. Infineon is committed to innovation and sustainability, aiming to enable a greener, more connected world through its semiconductor solutions.
Application
The IPD30N03S2L-20 is an N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: Used in switching regulators to improve efficiency.
2. Power Supplies: Employed in both AC-DC and DC-DC power supply circuits.
3. Motor Control: Utilized in brushless DC motor drivers and other motor control applications.
4. LED Drivers: Suitable for driving high-power LEDs.
5. Battery Management Systems: Utilized in charging and discharging circuits for batteries.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
1. DC-DC Converters: Used in switching regulators to improve efficiency.
2. Power Supplies: Employed in both AC-DC and DC-DC power supply circuits.
3. Motor Control: Utilized in brushless DC motor drivers and other motor control applications.
4. LED Drivers: Suitable for driving high-power LEDs.
5. Battery Management Systems: Utilized in charging and discharging circuits for batteries.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
Package
The IPD30N03S2L-20 is typically packaged in a TO-220 format. This package type is designed for power applications, offering good thermal performance and ease of mounting on heatsinks.
