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IPD60R2K1CE
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FabricanteTecnologias Infineon
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Type | SMD/SMT |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Vds - Drain - Source Breakdown Voltage | 600 V |
Visão Geral
Description
The IPD60R2K1CE is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for power applications. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 60A, making it suitable for high-voltage and high-current applications.
This IGBT is optimized for efficient switching, offering low conduction and switching losses, which enhances its performance in applications like inverters, motor drives, and induction heating. The device incorporates advanced technologies such as a trapezoidal gate structure that improves switching characteristics and reduces electromagnetic interference.
The IPD60R2K1CE is housed in a robust package, allowing for effective thermal management. This IGBT is commonly used in renewable energy systems, industrial equipment, and electric vehicles. Its reliable performance and efficiency make it a preferred choice for engineers designing power electronic circuits.
For precise specifications, always refer to the manufacturer's datasheet.
This IGBT is optimized for efficient switching, offering low conduction and switching losses, which enhances its performance in applications like inverters, motor drives, and induction heating. The device incorporates advanced technologies such as a trapezoidal gate structure that improves switching characteristics and reduces electromagnetic interference.
The IPD60R2K1CE is housed in a robust package, allowing for effective thermal management. This IGBT is commonly used in renewable energy systems, industrial equipment, and electric vehicles. Its reliable performance and efficiency make it a preferred choice for engineers designing power electronic circuits.
For precise specifications, always refer to the manufacturer's datasheet.
Equivalent
The IPD60R2K1CE is an IGBT (Insulated Gate Bipolar Transistor) typically used in power applications. Equivalent products include the IRG4PC50FD, FGA60N60, and IXGH40N60P. Always verify specifications such as voltage, current ratings, and switching speed to ensure compatibility in your specific application.
Features
The IPD60R2K1CE is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: Continuous collector current of up to 60A, enabling efficient performance in demanding environments.
3. Low On-State Voltage: Enhanced efficiency due to reduced conduction losses.
4. High Switching Speed: Facilitates faster operation, making it suitable for high-frequency applications.
5. Thermal Stability: Designed to operate effectively within a wide temperature range, ensuring reliability.
6. Robust Package: Available in a TO-247 package, providing good thermal performance and ease of mounting.
7. Low Gate Charge: Minimizes drive losses and allows for simpler gate drive circuits.
These features make the IPD60R2K1CE ideal for applications in inverters, motor drives, and power supplies, offering a balance of performance and efficiency.
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: Continuous collector current of up to 60A, enabling efficient performance in demanding environments.
3. Low On-State Voltage: Enhanced efficiency due to reduced conduction losses.
4. High Switching Speed: Facilitates faster operation, making it suitable for high-frequency applications.
5. Thermal Stability: Designed to operate effectively within a wide temperature range, ensuring reliability.
6. Robust Package: Available in a TO-247 package, providing good thermal performance and ease of mounting.
7. Low Gate Charge: Minimizes drive losses and allows for simpler gate drive circuits.
These features make the IPD60R2K1CE ideal for applications in inverters, motor drives, and power supplies, offering a balance of performance and efficiency.
Pinout
The IPD60R2K1CE is an N-channel MOSFET from Infineon, designed for power applications. It features a TO-220 package with a total of three pins. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground or the negative side of the load.
This device has a maximum drain-source voltage (V_ds) of 600V and a maximum continuous drain current (I_d) of 2A. It is primarily used in applications such as power supplies, motor drives, and other high-voltage switching applications. Its R_ds(on) is low, providing efficient operation in power management scenarios.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground or the negative side of the load.
This device has a maximum drain-source voltage (V_ds) of 600V and a maximum continuous drain current (I_d) of 2A. It is primarily used in applications such as power supplies, motor drives, and other high-voltage switching applications. Its R_ds(on) is low, providing efficient operation in power management scenarios.
Manufacturer
The IPD60R2K1CE is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in semiconductor solutions that enable efficient energy management, automotive electronics, and secure communication. The company focuses on a range of applications, including power management, automotive systems, industrial electronics, and Internet of Things (IoT) devices. Infineon is known for its innovation in power semiconductors and its commitment to sustainability and energy efficiency, making it a key player in the semiconductor industry.
Application
The IPD60R2K1CE is a high-performance IGBT (Insulated Gate Bipolar Transistor) module primarily used in industrial applications. Its key application areas include:
1. Motor Drives: Used in variable frequency drives for AC motor control.
2. Renewable Energy: Employed in solar inverters and wind turbines for power conversion.
3. UPS Systems: Utilized in uninterruptible power supplies for efficient energy management.
4. Induction Heating: Applied in induction cooking and industrial heating systems.
5. Welding Equipment: Used in arc welding machines for enhanced performance.
Overall, it is suitable for high-voltage and high-current applications requiring efficient switching and thermal performance.
1. Motor Drives: Used in variable frequency drives for AC motor control.
2. Renewable Energy: Employed in solar inverters and wind turbines for power conversion.
3. UPS Systems: Utilized in uninterruptible power supplies for efficient energy management.
4. Induction Heating: Applied in induction cooking and industrial heating systems.
5. Welding Equipment: Used in arc welding machines for enhanced performance.
Overall, it is suitable for high-voltage and high-current applications requiring efficient switching and thermal performance.
Package
The IPD60R2K1CE is typically packaged in a TO-247 format, which is a type of through-hole package designed for power devices, providing efficient heat dissipation and robust electrical connections.
