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IPD60R360P7S
+Lista de MateriaisMOSFETs CONSUMER
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPD60R360P7S
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Ficha Técnica IPD60R360P7S DataSheet
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Especificações
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Visão Geral
Description
Its P7 series design enhances performance by offering lower conduction and switching losses, which contributes to improved overall energy efficiency. The IPD60R360P7S is typically housed in a TO-252 package, which provides good thermal performance and is conducive for surface-mount applications.
This MOSFET is part of Infineon's efforts to support greener energy solutions by providing components that can handle high power densities efficiently, thereby reducing the energy losses in power electronics systems. Its robust design also ensures reliability and longevity in industrial and consumer electronics applications.
Equivalent
1. IRFZ44N from Vishay or Infineon
2. STP55NF06 from STMicroelectronics
3. FDB7045BL from ON Semiconductor
These equivalents are chosen based on similar voltage, current ratings, and package types but should be verified for specific application considerations. Always consult datasheets for compatibility.
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of around 13A, depending on the operating conditions.
2. R_DS(on): It features a low on-resistance of approximately 0.36 ohms, which helps reduce conduction losses and improve efficiency.
3. Technology: The device is built using Infineon's OptiMOS™ technology, known for delivering high performance in switching applications.
4. Package: The MOSFET is typically available in a TO-252 (DPAK) package, which provides good thermal performance with compact size.
5. Applications: It is suitable for use in applications such as switch-mode power supplies (SMPS), DC-DC converters, and other high-efficiency power management systems.
6. Temperature and Reliability: The device is designed to operate over a wide temperature range, ensuring reliability in various environmental conditions.
These features make the IPD60R360P7S a versatile choice for engineers looking to optimize power efficiency and performance.
Pinout
1. Gate (G): This pin is used to control the MOSFET switching. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET from the load.
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET.
The IPD60R360P7S is designed for applications requiring efficient power management, offering low on-resistance and high-speed switching, making it suitable for use in power supplies, DC-DC converters, and other high-performance applications.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved efficiency.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. Lighting: Used in LED lighting systems for energy-efficient operation.
4. Renewable Energy: Applied in solar inverters and other renewable energy systems.
5. DC-DC Converters: Helps in converting voltage levels efficiently in electronic devices.
6. Battery Chargers: Utilized in charging systems for better power management.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.