IPD80P03P4L-07

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IPD80P03P4L-07

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Especificações

Atributo Valor
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 2500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
REACH - SVHC Details
Mounting Type SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 30 V
Id - Continuous Drain Current 80 A
Rds On 5.6 mOhms
Vgs - Gate - Source Voltage - 16 V, + 5 V
Vgs th - Gate - Source Threshold Voltage 2 V
Qg - Gate Charge 63 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 88 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 60 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 4 ns
Series OptiMOS-P2
Transistor Type 1 P-Channel
Typical Turn - Off Delay Time 15 ns
Typical Turn - On Delay Time 8 ns
Width 6.22 mm
Part # Aliases SP000396296 IPD8P3P4L7XT IPD80P03P4L07ATMA1
Unit Weight 0.011640 oz
Qualification AEC-Q100

Visão Geral

Description

The IPD80P03P4L-07 is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (RDS(on)) of around 3.5 mΩ, which minimizes conduction losses and enhances efficiency. With a breakdown voltage rating of 30V and a continuous drain current capability of up to 80A, this MOSFET is well-suited for switching and linear applications in power management, motor control, and DC-DC converters.
The device is packaged in a TO-220 housing, offering effective thermal performance and heat dissipation. Its fast switching speed makes it ideal for high-frequency applications, while the low gate charge ensures reduced drive power requirements.
Key characteristics include high thermal stability, low gate threshold voltage, and robustness against avalanche conditions, making it a reliable choice for designers looking to optimize performance and efficiency in their circuits. Overall, the IPD80P03P4L-07 is a versatile component for modern electronic designs requiring efficient power management solutions.

Equivalent

The IPD80P03P4L-07 is a Power MOSFET. Equivalent products include the STP80P03L and IRF3205. Always verify specifications like V_DS, I_D, R_DS(on), and package type to ensure compatibility in your specific application.

Features

The IPD80P03P4L-07 is a N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (VDS) of up to 30V.
2. Current Handling: Offers a continuous drain current (ID) of 80A, making it suitable for high-current applications.
3. Low RDS(on): Features a low on-resistance (RDS(on)) of approximately 3.4 mΩ, enhancing efficiency and reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is in the range of 1-2V, allowing for efficient switching.
5. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching Speed: Designed for quick switching, reducing transition losses in high-frequency applications.
7. Thermal Performance: Good thermal management capabilities ensure reliable operation in demanding environments.
This MOSFET is ideal for applications in power supplies, motor control, and other high-efficiency designs.

Pinout

The IPD80P03P4L-07 is a Power MOSFET with a pin count of 3. The function of this device is to act as a switch or amplifier in electronic circuits, particularly for power management applications.
The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. It is the terminal through which the main current enters the MOSFET.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. It is the terminal through which the current exits the MOSFET.
The IPD80P03P4L-07 is designed for low on-resistance and high efficiency, making it suitable for applications in power supply circuits, battery management systems, and motor control.

Manufacturer

The IPD80P03P4L-07 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that specializes in designing, manufacturing, and marketing a wide range of electronic components and solutions. They are known for their innovative products in various sectors, including automotive, industrial, personal electronics, and communication.
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates in numerous countries worldwide. The company focuses on enabling smarter and more efficient electronic systems through advanced semiconductor technologies, including power management, microcontrollers, sensors, and more. Their products are utilized in a variety of applications, making them a key player in the electronics industry.
STMicroelectronics emphasizes sustainability and environmental responsibility in its operations and product designs, aligning with global trends towards energy efficiency and eco-friendly technologies. This commitment, along with their extensive research and development capabilities, positions them as a leader in the semiconductor market.

Application

The IPD80P03P4L-07 is a power MOSFET typically used in various applications such as DC-DC converters, power management systems, and motor control. Its low on-resistance and high current handling capabilities make it suitable for efficient power conversion in consumer electronics, automotive applications, and industrial automation. Additionally, it can be employed in battery management systems and renewable energy systems, such as solar inverters, to enhance overall efficiency and reliability. Its compact design also makes it ideal for space-constrained applications.

Package

The IPD80P03P4L-07 is packaged in a TO-220 form factor. This package type is commonly used for power devices, offering good thermal performance and allowing for efficient heat dissipation.

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