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IPD80R280P7
+Lista de MateriaisMOSFETs LOW POWER_NEW
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FabricanteInfineon / IR
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Peça do Fabricante #IPD80R280P7
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Ficha Técnica IPD80R280P7 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | Reel |
Visão Geral
Description
Key features of the IPD80R280P7 include:
1. Low On-Resistance: It offers a low R_DS(on), which minimizes conduction losses and improves overall efficiency.
2. High-Speed Switching: This MOSFET supports fast switching speeds, contributing to reduced switching losses and better performance in high-frequency applications.
3. Robust Design: Built to withstand high voltages and currents, it offers reliable operation in demanding environments.
4. Thermal Performance: The device is designed to dissipate heat efficiently, enhancing its reliability and lifespan.
The IPD80R280P7 is suitable for designers working on energy-efficient solutions, providing a balance of performance and cost-effectiveness in power electronic systems.
Equivalent
1. STMicroelectronics: STP80NF06
2. ON Semiconductor: NTD6416AN
3. Vishay: SIHP33N60E
4. Fairchild Semiconductor (now part of ON Semiconductor): FDP33N25
These equivalents are based on similar specifications, but it's important to verify parameters like voltage, current ratings, and package type to ensure compatibility with your application.
Features
1. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 800V, making it suitable for high-voltage applications.
2. Current Capability: It supports a continuous drain current (I_D) of up to 13A, allowing it to manage significant power loads.
3. R_DS(on): The on-resistance is approximately 0.28 Ohms, ensuring low power loss during operation and improving efficiency.
4. Technology: It is based on Infineon’s CoolMOS™ P7 technology, which enhances performance with low switching losses and high-speed switching capabilities.
5. Energy Efficiency: The P7 series is designed for high efficiency, reducing energy costs in power supply applications.
6. Thermal Performance: The MOSFET offers good thermal performance, which is critical in high-power scenarios to maintain reliability.
7. Applications: Typical applications include switch-mode power supplies, server, telecom, and industrial power systems.
These features make the IPD80R280P7 well-suited for high-efficiency power conversion and management tasks.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is turned on.
3. Source (S): This is the terminal that acts as the return path for the current flowing through the drain when the MOSFET is activated.
The IPD80R280P7 is specifically designed for applications requiring high-speed switching and low on-resistance, which makes it suitable for use in power supply, motor control, and other energy-efficient applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Ideal for enhancing efficiency in AC/DC converters.
2. DC-DC Converters: Used in power management for various electronic devices.
3. Motor Drives: Applicable in industrial and automotive motor control systems.
4. Telecommunications: Supports power management in network infrastructure.
5. Renewable Energy Systems: Utilized in solar inverters and other green technology initiatives.
6. Consumer Electronics: Integral in power regulation for devices like laptops and gaming consoles.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.