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IPD80R600P7
+Lista de MateriaisMOSFETs LOW POWER_NEW
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPD80R600P7
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Ficha Técnica IPD80R600P7 DataSheet
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Especificações
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Visão Geral
Description
The "80" in its name indicates its maximum drain-source voltage of 800V, while the "600" denotes a continuous drain current capability of 6A. Key features of the IPD80R600P7 include a low on-state resistance (R_DS(on)), which minimizes power losses and improves thermal performance, and a fast switching speed, enhancing overall system efficiency. Additionally, it offers high avalanche ruggedness, contributing to reliability under challenging operating conditions.
The device comes in a TO-252 package, enabling efficient thermal dissipation and ease of integration into various circuit designs. Overall, the IPD80R600P7 is ideal for designers seeking a balance of performance, efficiency, and robustness in their electronic systems.
Equivalent
1. STMicroelectronics: STP80NF70
2. ON Semiconductor: NTP80N06
3. Vishay: SiHP80N60E
These alternatives may vary slightly in specifications, so it's essential to verify compatibility for specific applications. Always consult the datasheets and consider any differences in package type or performance characteristics.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) rating of 800V and a continuous drain current (I_d) capability of up to 600mA.
2. Low On-State Resistance: The MOSFET features a low R_ds(on), which minimizes conduction losses, improving overall efficiency.
3. Fast Switching Speed: Designed for high-speed operations, enabling efficient switching in power electronics applications.
4. Robustness and Reliability: Offers high avalanche ruggedness and can handle high voltage spikes, ensuring durability and reliability in demanding environments.
5. Package Type: Typically housed in a TO-252 (DPAK) package, facilitating ease of thermal management and integration into various circuit designs.
6. Applications: Ideal for use in applications such as LED drivers, switched-mode power supplies (SMPS), and industrial power supplies.
These features make the IPD80R600P7 suitable for energy-efficient, high-frequency applications requiring high voltage and low power consumption.
Pinout
1. Gate (G): This pin is used to turn the MOSFET on and off by applying voltage.
2. Drain (D): This is the main current-carrying terminal connected to the load.
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET.
Additionally, there may be a fourth pin or a tab connected to the Drain, designed for heat dissipation. The IPD80R600P7 is employed in various power conversion and switching applications due to its efficiency, low on-resistance, and fast switching characteristics.
Manufacturer
Founded in 1999 as a spin-off from Siemens AG, Infineon has become one of the largest semiconductor companies in the world. The company focuses on delivering energy-efficient solutions that enable smart mobility, secure communications, and seamless connectivity. Their products are widely used in automotive electronics, industrial power control systems, power supplies, and various other applications.
Application
1. Switch Mode Power Supplies (SMPS): Utilized for energy-efficient voltage conversion in power supply units.
2. DC-DC Converters: Used in both isolated and non-isolated converters for improved efficiency.
3. Motor Drives: Provides effective control in motor drive applications.
4. Lighting: Employed in LED lighting systems for efficient power switching.
5. Renewable Energy Systems: Utilized in solar inverters and other renewable energy conversion systems.
6. Telecommunications: Used in power supply units for telecom equipment.
These applications benefit from the MOSFET's low on-resistance, fast switching, and high efficiency.