Imagens apenas para referência
IPG20N04S4L-08
+Lista de MateriaisMOSFETs N-Ch 40V 20A TDSON-8 OptiMOS-T2
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #IPG20N04S4L-08
-
Ficha Técnica IPG20N04S4L-08 DataSheet
-
Em Estoque28319
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
Visão Geral
Description
The IPG20N04S4L-08 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and performance in power management applications. It features a low on-resistance and fast switching capabilities, making it suitable for a wide range of applications such as DC-DC converters, motor control, and power supply circuits.
Key specifications include a drain-source voltage (V_DS) of up to 40V and a continuous drain current (I_D) of 20A, which allow it to handle substantial power loads. The MOSFET is constructed using advanced trench technology, which helps reduce power losses and improve thermal performance. It also includes built-in protection features like ESD (Electrostatic Discharge) protection, enhancing its reliability in various operating conditions.
This component is commonly used in both consumer electronics and industrial applications due to its robustness and efficiency. Its compact SMD (Surface-Mount Device) package facilitates easy integration into circuit boards, allowing for more compact and efficient electronic designs.
Key specifications include a drain-source voltage (V_DS) of up to 40V and a continuous drain current (I_D) of 20A, which allow it to handle substantial power loads. The MOSFET is constructed using advanced trench technology, which helps reduce power losses and improve thermal performance. It also includes built-in protection features like ESD (Electrostatic Discharge) protection, enhancing its reliability in various operating conditions.
This component is commonly used in both consumer electronics and industrial applications due to its robustness and efficiency. Its compact SMD (Surface-Mount Device) package facilitates easy integration into circuit boards, allowing for more compact and efficient electronic designs.
Equivalent
The Infineon IPG20N04S4L-08 is a N-channel MOSFET. Equivalent products might include MOSFETs with similar specifications from other manufacturers, such as the IRL3803 from Infineon, FDB7030BL from ON Semiconductor, or the Vishay Siliconix SI4470DY. Be sure to compare key parameters like voltage, current ratings, Rds(on), and package type to ensure compatibility. Always consult datasheets and confirm with the manufacturer’s technical support for precise equivalence.
Features
The IPG20N04S4L-08 is a power MOSFET semiconductor device, distinguished by several key features:
1. Voltage and Current Ratings: It is designed to handle low voltage and high current applications, typically with a maximum voltage of around 40V and a continuous current rating exceeding 20A.
2. RDS(on): Has a low on-resistance (RDS(on)), which minimizes power loss and heat generation, contributing to higher efficiency in power conversion.
3. Technology: Built using advanced trench technology, enhancing performance in terms of switching speed and efficiency.
4. Package Type: Commonly housed in a compact, surface-mount package such as TO-252 (DPAK), which is designed for efficient heat dissipation.
5. Applications: Suitable for use in DC-DC converters, power management for electronic devices, motor control circuitry, and other applications requiring efficient and reliable switching.
6. Thermal Performance: Designed for optimal thermal performance, allowing for effective heat management in compact circuit designs.
These features make the IPG20N04S4L-08 a suitable component for applications demanding robust power handling and efficiency.
1. Voltage and Current Ratings: It is designed to handle low voltage and high current applications, typically with a maximum voltage of around 40V and a continuous current rating exceeding 20A.
2. RDS(on): Has a low on-resistance (RDS(on)), which minimizes power loss and heat generation, contributing to higher efficiency in power conversion.
3. Technology: Built using advanced trench technology, enhancing performance in terms of switching speed and efficiency.
4. Package Type: Commonly housed in a compact, surface-mount package such as TO-252 (DPAK), which is designed for efficient heat dissipation.
5. Applications: Suitable for use in DC-DC converters, power management for electronic devices, motor control circuitry, and other applications requiring efficient and reliable switching.
6. Thermal Performance: Designed for optimal thermal performance, allowing for effective heat management in compact circuit designs.
These features make the IPG20N04S4L-08 a suitable component for applications demanding robust power handling and efficiency.
Pinout
The IPG20N04S4L-08 is a power MOSFET manufactured by Infineon Technologies. It typically comes in a standard package with a 3-pin configuration. The three pins are:
1. Gate (G): This pin is used to control the MOSFET's operation. Applying the appropriate voltage to the gate allows the device to switch on or off.
2. Drain (D): This is the main terminal for the current flow when the MOSFET is in the 'on' state. The drain is where the current leaves the MOSFET.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. In many circuits, it's often connected to ground in N-channel MOSFET applications.
The IPG20N04S4L-08 is used in various power management applications, offering low on-state resistance and high-speed switching capabilities, making it suitable for efficient power conversion and management.
1. Gate (G): This pin is used to control the MOSFET's operation. Applying the appropriate voltage to the gate allows the device to switch on or off.
2. Drain (D): This is the main terminal for the current flow when the MOSFET is in the 'on' state. The drain is where the current leaves the MOSFET.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. In many circuits, it's often connected to ground in N-channel MOSFET applications.
The IPG20N04S4L-08 is used in various power management applications, offering low on-state resistance and high-speed switching capabilities, making it suitable for efficient power conversion and management.
Manufacturer
The IPG20N04S4L-08 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that produces a wide range of electronic components, including microcontrollers, sensors, and power semiconductors. The company serves various sectors such as automotive, industrial, cybersecurity, and IoT applications. Infineon is known for its focus on energy efficiency, mobility, and security technologies.
Application
The IPG20N04S4L-08 is a Power MOSFET that is commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Automotive Systems: Used in electronic control units, motor drives, and power management for electric and hybrid vehicles.
2. Industrial Automation: Applied in motor control, robotics, and automation systems for efficient power management.
3. Consumer Electronics: Utilized in power supplies, battery management systems, and load switches.
4. Renewable Energy: Engaged in solar inverters and other renewable energy applications for efficient energy conversion.
5. Telecommunications: Found in power management for base stations and networking equipment.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
1. Automotive Systems: Used in electronic control units, motor drives, and power management for electric and hybrid vehicles.
2. Industrial Automation: Applied in motor control, robotics, and automation systems for efficient power management.
3. Consumer Electronics: Utilized in power supplies, battery management systems, and load switches.
4. Renewable Energy: Engaged in solar inverters and other renewable energy applications for efficient energy conversion.
5. Telecommunications: Found in power management for base stations and networking equipment.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.
Package
The IPG20N04S4L-08 is a MOSFET transistor housed in a DPAK (TO-252) package. This type of package is commonly used for surface mounting in electronic circuits, offering a compact design suitable for efficient heat dissipation and easy integration into various applications.
