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IPG20N06S4L-26
+Lista de MateriaisMOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPG20N06S4L-26
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Ficha Técnica IPG20N06S4L-26 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
Visão Geral
Description
Key features of the IPG20N06S4L-26 include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of around 20A, making it suitable for medium to high-power applications.
2. Low On-Resistance: The low on-resistance minimizes power loss and heat generation, enhancing efficiency.
3. Fast Switching: Its design allows for rapid switching speeds, which is advantageous in power supply and motor control systems.
4. Thermal Performance: It often comes with good thermal management features, such as a package that dissipates heat effectively.
Overall, the IPG20N06S4L-26 is an integral component for applications requiring efficient and reliable power management.
Equivalent
1. IRFZ44N - N-channel MOSFET, suitable for similar applications with comparable voltage and current ratings.
2. STP55NF06 - Offers similar specifications and is used in automotive and other power switching applications.
3. FQP30N06L - Provides low gate charge and fast switching, fitting for various electronic uses.
4. NTMFS4921NL - Provides similar characteristics with low RDS(on) and suitable for efficient power management.
Always verify specifications to ensure compatibility.
Features
1. N-Channel MOSFET: It is an N-channel type, which means it uses electrons as the charge carriers.
2. Low On-Resistance: This MOSFET offers low on-resistance, ensuring efficiency by reducing energy loss during operation.
3. High-Speed Switching: It supports fast switching speeds, making it suitable for applications requiring quick on/off cycles.
4. Enhancement Mode: As an enhancement-mode MOSFET, it turns on when a positive voltage is applied to the gate.
5. Thermal Performance: Designed for good thermal performance, allowing it to handle high power levels without overheating.
6. Compact Package: Usually available in compact packages suitable for surface mount technology (SMT), optimizing space on printed circuit boards (PCBs).
7. Applications: It is suitable for use in power management, motor control, DC-DC converters, and other power-related applications.
These characteristics make the IPG20N06S4L-26 a versatile component for various electronic and industrial uses.
Pinout
1. Gate (G): This is the control pin that triggers the MOSFET to turn on or off. It receives the input voltage signal to control the flow of current between the drain and source.
2. Drain (D): This is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the supply voltage, completing the circuit.
The IPG20N06S4L-26 is used in power management and switching applications due to its low on-state resistance and high current-carrying capability. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.