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IPP034NE7N3 G
+Lista de MateriaisMOSFETs N-Ch 75V 100A TO220-3 OptiMOS 3
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPP034NE7N3 G
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Ficha Técnica IPP034NE7N3 G DataSheet
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Especificações
| Atributo | Valor |
| Packaging | Tube |
| Standard Pack Qty | 500 |
Visão Geral
Description
Equivalent
- STMicroelectronics' STP55NF06
- Vishay's SiHP33N60E
- NXP's PSMN7R0-60YS
Always verify compatibility with specific application requirements and consult datasheets for precise matching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which current flows out of the MOSFET when it is conducting.
The IPP034NE7N3 G is designed for applications requiring efficient switching, such as in power supplies and motor drives. It is known for its low on-state resistance, which allows for minimal power loss and efficient operation.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies (SMPS) for enhanced efficiency.
2. Motor Control: Utilized in DC motor drives for industrial and automotive applications.
3. Inverters: Applied in DC-AC inverters for renewable energy systems like solar panels.
4. Battery Management: Supports battery protection circuits in devices requiring high power density.
5. Consumer Electronics: Implemented in devices needing efficient power switching and management.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.