IPP040N06N

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IPP040N06N

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MOSFETs N-Ch 60V 80A TO220-3

  • FabricanteTecnologias Infineon

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Especificações

Atributo Valor
Packaging Tube
Standard Pack Qty 500

Visão Geral

Description

The IPP040N06N is a 60V, 40A N-channel MOSFET from Infineon’s OptiMOS™ 5 series, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): 4.0 mΩ (max) at 10V VGS, reducing conduction losses.
- Fast switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and SMPS.
- Robust design: Avalanche-rated and qualified for industrial/automotive use (AEC-Q101).
- Thermal performance: Low thermal resistance (RthJC) for efficient heat dissipation.
Packaged in TO-220, it suits space-constrained designs. Typical applications include battery management, power tools, and LED lighting.
For detailed specs, refer to Infineon’s datasheet.

Equivalent

Equivalent products to the IPP040N06N (60V, 40A MOSFET) include:
- IRL40B209 (Infineon)
- STP40NF10 (STMicroelectronics)
- FDPF40N06 (Fairchild/ON Semi)
- IRFZ44N (Vishay, lower current rating)
Check datasheets for exact specs like RDS(on), package, and thermal performance before substitution.

Features

The IPP040N06N is a 60V, 40A N-channel MOSFET from Infineon, optimized for high-efficiency power applications. Key features:
- Low On-Resistance (RDS(on)): 4.0 mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Low gate charge (QG ~ 60nC) and output capacitance (Coss ~ 580pF) for efficient high-frequency operation.
- Robust Design: Avalanche-rated, with a high 175°C junction temperature and ±20V gate-source voltage tolerance.
- Logic-Level Drive: Fully enhanced at VGS = 4.5V, suitable for low-voltage control circuits.
- Package: TO-220 (3-pin), offering good thermal performance.
Ideal for DC-DC converters, motor drives, and power switches in automotive/industrial systems. Combines low losses with high reliability.

Pinout

The IPP040N06N is a 60V, 40A N-channel MOSFET in a TO-220 package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): ~4 mΩ (max at VGS=10V).
- Fast switching for power applications (e.g., motor drives, DC-DC converters).
- Logic-level compatible (can be driven by 5V signals).
Concise and functional for power electronics use.

Application

The IPP040N06N is a 60V, 40A N-channel MOSFET commonly used in:
1. Power Supplies – DC-DC converters, SMPS.
2. Motor Control – Brushed/BLDC motor drivers.
3. Automotive Systems – LED drivers, battery management.
4. Industrial Applications – Inverters, load switches.
5. Consumer Electronics – High-efficiency power stages.
Its low on-resistance (4 mΩ) and high current handling make it ideal for high-power, high-efficiency switching applications.

Package

The IPP040N06N is a power MOSFET in a TO-220 package. This through-hole package is commonly used for high-power applications, offering good thermal performance and ease of mounting on heat sinks. It has three leads (Gate, Drain, Source) and is suitable for switching and amplification in circuits requiring high current and voltage handling.

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