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IPP110N20N3G
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FabricanteTecnologias Infineon
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| RDS(on) | 11mΩ@10V,88A |
| DraintoSourceVoltage | 200V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 88A |
| Type | N-channel |
| GateThresholdVoltage(Vgs(th)@Id) | 4V@270uA |
Visão Geral
Description
The IPP110N20N3G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. This device features a maximum continuous drain current of 110A and a drain-source voltage rating of 200V, making it suitable for high-power switching applications. The "N" in its designation indicates that it is an N-channel MOSFET, which typically offers better efficiency and faster switching speeds compared to P-channel devices.
The IPP110N20N3G is known for its low on-resistance (RDS(on)), which minimizes power losses during operation. It is often used in power supplies, motor drives, and other circuits requiring efficient power management. Its robust thermal performance allows for better heat dissipation, enhancing reliability in demanding environments.
This MOSFET is packaged in a TO-220 or similar format, facilitating easy heat sinking and integration into various designs. Overall, the IPP110N20N3G represents a reliable choice for engineers seeking efficient and high-capacity switching components.
The IPP110N20N3G is known for its low on-resistance (RDS(on)), which minimizes power losses during operation. It is often used in power supplies, motor drives, and other circuits requiring efficient power management. Its robust thermal performance allows for better heat dissipation, enhancing reliability in demanding environments.
This MOSFET is packaged in a TO-220 or similar format, facilitating easy heat sinking and integration into various designs. Overall, the IPP110N20N3G represents a reliable choice for engineers seeking efficient and high-capacity switching components.
Equivalent
The IPP110N20N3G is an N-channel MOSFET with a voltage rating of 200V and a current rating of 110A. Equivalent products include the IRF3205, STP200N20, and MTP10N20E, which offer similar specifications in terms of voltage and current handling. Always verify specific parameters such as Rds(on) and thermal characteristics before substitution.
Features
The IPP110N20N3G is a high-performance N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 110A, providing robust performance in demanding environments.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 110 mΩ, it ensures efficient power conduction, minimizing heat generation and energy loss.
4. Fast Switching Speed: The device features fast switching capabilities, which enhance efficiency in switching applications.
5. Thermal Management: It has a high thermal stability, allowing it to operate effectively under high-temperature conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the IPP110N20N3G is ideal for power electronics, including DC-DC converters and motor drivers, where efficiency and reliability are crucial.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 110A, providing robust performance in demanding environments.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 110 mΩ, it ensures efficient power conduction, minimizing heat generation and energy loss.
4. Fast Switching Speed: The device features fast switching capabilities, which enhance efficiency in switching applications.
5. Thermal Management: It has a high thermal stability, allowing it to operate effectively under high-temperature conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the IPP110N20N3G is ideal for power electronics, including DC-DC converters and motor drivers, where efficiency and reliability are crucial.
Pinout
The IPP110N20N3G is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain is the terminal through which the current enters the MOSFET. It connects to the load.
3. Source (S) - The source is the terminal through which the current exits the MOSFET. It typically connects to ground or a lower voltage in the circuit.
The IPP110N20N3G is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 110A. It is suitable for various switching and amplification applications in power electronics.
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain is the terminal through which the current enters the MOSFET. It connects to the load.
3. Source (S) - The source is the terminal through which the current exits the MOSFET. It typically connects to ground or a lower voltage in the circuit.
The IPP110N20N3G is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 110A. It is suitable for various switching and amplification applications in power electronics.
Manufacturer
The IPP110N20N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its innovations in power management and energy efficiency, serving various industries such as automotive, industrial, and communications. Infineon focuses on enabling smart, secure, and efficient solutions for a connected world.
Application
The IPP110N20N3G is an N-channel power MOSFET designed for high-efficiency applications. Its key application areas include:
1. Power Supply Circuits: Used in switch-mode power supplies (SMPS) for energy conversion.
2. Motor Control: Employed in drive circuits for electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in buck or boost converters to regulate voltage levels.
4. Renewable Energy Systems: Applied in solar inverters and other energy management systems.
5. Consumer Electronics: Integrated in power management for devices like computers and televisions.
Its high voltage and current ratings make it suitable for demanding applications.
1. Power Supply Circuits: Used in switch-mode power supplies (SMPS) for energy conversion.
2. Motor Control: Employed in drive circuits for electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in buck or boost converters to regulate voltage levels.
4. Renewable Energy Systems: Applied in solar inverters and other energy management systems.
5. Consumer Electronics: Integrated in power management for devices like computers and televisions.
Its high voltage and current ratings make it suitable for demanding applications.
Package
The IPP110N20N3G is typically packaged in a TO-220 housing. This package type is designed for efficient thermal dissipation and is commonly used in power applications, providing reliable performance in high-voltage environments.
