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IPP200N15N3G
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Especificações
| Atributo | Valor |
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| RDS(on) | 20mΩ@10V,50A |
| DraintoSourceVoltage | 150V |
| Pd-PowerDissipation | 150W |
| Current-ContinuousDrain(Id) | 50A |
| Type | 1 N-channel |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
Visão Geral
Description
The IPP200N15N3G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power electronics applications. It features a voltage rating of 150V and a continuous drain current of up to 200A, making it suitable for high-voltage and high-current applications.
This component is characterized by low on-resistance (RDS(on)), which minimizes power losses during operation, improving efficiency in power conversion systems. It typically employs a TO-247 package, enhancing thermal dissipation capabilities.
The IPP200N15N3G is often utilized in applications such as switch-mode power supplies, motor drives, and renewable energy systems, where efficient switching performance is critical. Its fast switching speeds and robustness under varying operational conditions make it a reliable choice for engineers seeking to optimize performance in demanding electronic designs.
This component is characterized by low on-resistance (RDS(on)), which minimizes power losses during operation, improving efficiency in power conversion systems. It typically employs a TO-247 package, enhancing thermal dissipation capabilities.
The IPP200N15N3G is often utilized in applications such as switch-mode power supplies, motor drives, and renewable energy systems, where efficient switching performance is critical. Its fast switching speeds and robustness under varying operational conditions make it a reliable choice for engineers seeking to optimize performance in demanding electronic designs.
Equivalent
The IPP200N15N3G is an N-channel MOSFET with a 200V drain-source voltage and a 15A continuous current rating. Equivalent products include:
1. IRF320 (International Rectifier)
2. STP200N15 (STMicroelectronics)
3. FDP200N15 (Fairchild Semiconductor)
Always verify specifications such as voltage, current, RDS(on), and package type before substitution.
1. IRF320 (International Rectifier)
2. STP200N15 (STMicroelectronics)
3. FDP200N15 (Fairchild Semiconductor)
Always verify specifications such as voltage, current, RDS(on), and package type before substitution.
Features
The IPP200N15N3G is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 150V, suitable for high-voltage applications.
2. Current Rating: 200A, enabling high current handling capabilities.
3. RDS(on): Low on-resistance (typically around 0.015Ω), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold, allowing for easier drive requirements.
5. Package Type: Typically available in a TO-220 or similar package for effective heat dissipation.
6. Thermal Performance: Excellent thermal stability with a high maximum junction temperature.
7. Fast Switching: Designed for high-speed applications, reducing switching losses.
8. Applications: Ideal for power supplies, motor drives, and industrial control systems.
This MOSFET is beneficial for those seeking efficient power management solutions in demanding environments.
1. Voltage Rating: 150V, suitable for high-voltage applications.
2. Current Rating: 200A, enabling high current handling capabilities.
3. RDS(on): Low on-resistance (typically around 0.015Ω), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold, allowing for easier drive requirements.
5. Package Type: Typically available in a TO-220 or similar package for effective heat dissipation.
6. Thermal Performance: Excellent thermal stability with a high maximum junction temperature.
7. Fast Switching: Designed for high-speed applications, reducing switching losses.
8. Applications: Ideal for power supplies, motor drives, and industrial control systems.
This MOSFET is beneficial for those seeking efficient power management solutions in demanding environments.
Pinout
The IPP200N15N3G is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the input terminal connected to the ground or negative side of the power supply. It serves as the reference point for the gate voltage.
The IPP200N15N3G is designed for high-efficiency applications and can handle a maximum drain current of 200A with a voltage rating of 150V.
1. Gate (G): This pin is used to control the switching of the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the input terminal connected to the ground or negative side of the power supply. It serves as the reference point for the gate voltage.
The IPP200N15N3G is designed for high-efficiency applications and can handle a maximum drain current of 200A with a voltage rating of 150V.
Manufacturer
The IPP200N15N3G is a product manufactured by Infineon Technologies, a global semiconductor company. Infineon is renowned for its development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on various sectors, such as automotive, industrial electronics, and communication.
Founded in 1999 and headquartered in Neubiberg, Germany, Infineon Technologies is known for its commitment to innovation and sustainability in technology. It plays a crucial role in the advancement of power efficiency, enabling applications in electric vehicles, renewable energy, and smart devices. The IPP200N15N3G, specifically, is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that is used in various applications, including power management and conversion.
Infineon is recognized as a leader in the semiconductor industry, offering products that are integral to modern electronic systems.
Founded in 1999 and headquartered in Neubiberg, Germany, Infineon Technologies is known for its commitment to innovation and sustainability in technology. It plays a crucial role in the advancement of power efficiency, enabling applications in electric vehicles, renewable energy, and smart devices. The IPP200N15N3G, specifically, is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that is used in various applications, including power management and conversion.
Infineon is recognized as a leader in the semiconductor industry, offering products that are integral to modern electronic systems.
Application
The IPP200N15N3G is an N-channel MOSFET used in various applications, including:
1. Power Switching: Ideal for high-efficiency power supplies and converters.
2. Motor Control: Suitable for driving electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in step-down and step-up converters for voltage regulation.
4. LED Drivers: Employed in lighting systems to control LED brightness.
5. Battery Management Systems: Used in energy storage applications for efficient switching.
6. Telecommunications: Integrated in RF amplifiers and signal processing circuits.
Its high voltage and current ratings make it versatile for demanding electronic applications.
1. Power Switching: Ideal for high-efficiency power supplies and converters.
2. Motor Control: Suitable for driving electric motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in step-down and step-up converters for voltage regulation.
4. LED Drivers: Employed in lighting systems to control LED brightness.
5. Battery Management Systems: Used in energy storage applications for efficient switching.
6. Telecommunications: Integrated in RF amplifiers and signal processing circuits.
Its high voltage and current ratings make it versatile for demanding electronic applications.
Package
The IPP200N15N3G is typically packaged in a TO-220 or similar format, which is a popular choice for power MOSFETs. This package type provides efficient heat dissipation and is suitable for various applications, including power supplies and motor control.
