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IPP60R070CFD7
+Lista de MateriaisMOSFETs HIGH POWER_NEW
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPP60R070CFD7
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Ficha Técnica IPP60R070CFD7 DataSheet
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Especificações
| Atributo | Valor |
| Packaging | Tube |
Visão Geral
Description
The IPP60R070CFD7 is particularly suitable for applications in power supplies, adapters, and other electronic devices that require efficient power management. It operates at a breakdown voltage of 600V and has a low RDS(on) value, which minimizes the power dissipation during operation. The device is built using advanced semiconductor technology to ensure high reliability and robustness even under challenging conditions.
Overall, the IPP60R070CFD7 combines the benefits of fast switching speed, low losses, and high reliability, making it an ideal choice for designers looking to optimize energy efficiency and performance in their power electronics systems.
Equivalent
1. STMicroelectronics STL60N60DM2 – 600V MDmesh DM2.
2. ON Semiconductor FCPF065N60 – 600V SuperFET2.
3. Vishay SiHG60N60E – 600V E Series MOSFET.
Always verify specifications and ratings against application requirements when selecting equivalents.
Features
1. Voltage and Current Ratings: Typically, it has a breakdown voltage of 600V and a drain current rating suitable for high-power applications.
2. Low RDS(on): This MOSFET is characterized by a low on-state resistance, which minimizes conduction losses and enhances efficiency.
3. Technology: Based on Infineon's CoolMOS™ CFD7 technology, which offers improved switching performance and reduced energy losses.
4. Fast Switching: Provides fast switching speeds essential for high-frequency operations, which helps in reducing the size of passive components and overall system cost.
5. Thermal Performance: Features excellent thermal performance with low thermal resistance, enabling efficient heat dissipation.
6. Robustness: Designed to withstand high dv/dt and di/dt conditions, ensuring reliability in demanding applications.
7. Applications: Suitable for use in power supplies, inverters, and other applications requiring efficient power conversion.
These features make the IPP60R070CFD7 an excellent choice for applications requiring high efficiency and reliability in power handling.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET. When voltage is applied to the gate, it allows current to flow between the drain and source terminals.
2. Drain (D): The drain terminal is where the controlled current flows out of the MOSFET when the device is in the 'on' state.
3. Source (S): The source terminal is where the current enters the MOSFET.
The IPP60R070CFD7 is designed for high-efficiency power management applications and offers features like low on-state resistance, high-speed switching, and robust avalanche characteristics.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Renewable Energy: Helps in the conversion and management of energy in solar inverters and wind turbines.
4. LED Lighting: Used in LED drivers for efficient power regulation.
5. Battery Management: Supports efficient charging and discharging cycles in battery management systems.
Its robust performance in high-frequency applications makes it ideal for these areas.