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IPP60R099C6
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPP60R099C6
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C6 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | IPP6R99C6XK SP000687556 IPP60R099C6XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 37.9 A |
| Rds On | 90 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 119 nC |
| Pd - Power Dissipation | 278 W |
| Channel Mode | Enhancement |
| Fall Time | 6 ns |
| Rise Time | 12 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 75 ns |
| Typical Turn - On Delay Time | 15 ns |
Visão Geral
Description
Key specifications include a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 99A, enabling it to handle significant power loads. Its low on-resistance (RDS(on)) of approximately 9.9 milliohms minimizes energy loss during operation, contributing to improved thermal performance and efficiency.
The device features a TO-220 package, allowing for effective heat dissipation, which is critical in high-power applications. Its fast switching speed makes it suitable for high-frequency applications, enhancing overall system performance.
Overall, the IPP60R099C6 is valued for its reliability and efficiency, making it a popular choice in modern electronic circuits requiring robust power management solutions.
Equivalent
1. IRF3205
2. STP60NF06
3. FQP60N06L
4. AUIRFS840
5. BSC027N06LS
Always verify specifications like voltage, current handling, and RDS(on) for compatibility in your application.
Features
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. RDS(on): Low on-resistance of 0.099 ohms, offering improved conduction efficiency.
3. Current Rating: Can handle a continuous drain current of up to 60A, allowing for robust performance in demanding tasks.
4. Gate Threshold Voltage (VGS): Typically around 2-4V, ensuring compatibility with various drive voltages.
5. Fast Switching: Optimized for fast switching speeds, reducing switching losses and increasing overall efficiency in power supply circuits.
6. Thermal Performance: High thermal stability with a maximum operating temperature of 175°C, enabling operation under harsh conditions.
7. Package Type: Available in a TO-220 package, providing effective heat dissipation.
These features make the IPP60R099C6 ideal for use in switch mode power supplies, renewable energy systems, and motor control applications.
Pinout
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal through which the current exits the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Tab (T): Typically connected to the source for thermal dissipation.
5. Body Diode: Integrated component allowing current flow from drain to source when in reverse bias.
This device is designed for high-efficiency applications, supporting a maximum continuous drain current of 60A and a maximum drain-source voltage of 100V. Its low on-resistance improves performance in power management systems.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. DC-DC Converters: Ideal for buck, boost, and other converter topologies.
3. Motor Control: Suitable for driving electric motors in industrial and automotive applications.
4. Inverters: Utilized in renewable energy systems for converting DC to AC.
5. Consumer Electronics: Employed in various devices requiring efficient power management.
Its low on-resistance and high-speed switching capabilities enhance overall system performance.