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IPP65R095C7
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Peça do Fabricante #IPP65R095C7
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C7 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SP001080122 IPP65R095C7XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 24 A |
| Rds On | 84 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 45 nC |
| Pd - Power Dissipation | 128 W |
| Channel Mode | Enhancement |
| Fall Time | 7 ns |
| Rise Time | 12 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 60 ns |
| Typical Turn - On Delay Time | 14 ns |
Visão Geral
Description
The IPP65R095C7 is an N-channel MOSFET designed for high-efficiency power applications. It belongs to Infineon's CoolMOS series, characterized by low on-resistance (Rds(on)) and high thermal stability, making it suitable for power supplies, motor drives, and automotive applications. With a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 95A, it offers a strong performance for high-voltage switching.
Key features include a low gate charge (Qg), which reduces switching losses, and fast switching capabilities, enabling efficient operation in various circuits. The device typically comes in a TO-220 package, allowing for easy heat dissipation and installation. Its robust design ensures reliability under demanding conditions, making it a preferred choice for engineers in the design of energy-efficient systems. The IPP65R095C7 is particularly valuable in applications that require high speed and efficiency, such as inverters, converters, and industrial drives.
Key features include a low gate charge (Qg), which reduces switching losses, and fast switching capabilities, enabling efficient operation in various circuits. The device typically comes in a TO-220 package, allowing for easy heat dissipation and installation. Its robust design ensures reliability under demanding conditions, making it a preferred choice for engineers in the design of energy-efficient systems. The IPP65R095C7 is particularly valuable in applications that require high speed and efficiency, such as inverters, converters, and industrial drives.
Equivalent
The IPP65R095C7 is an N-channel MOSFET. Equivalent products include the STP65NF95, IRF3205, and FQP65N06. Ensure to check key specifications such as voltage ratings, current handling, RDS(on), and package type for compatibility in your application. Always verify with the manufacturer's datasheet for precise matching.
Features
The IPP65R095C7 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. On-Resistance: With a low on-resistance (R_DS(on)) of about 0.095 ohms, it reduces conduction losses and enhances efficiency.
3. Current Capacity: It can handle a continuous drain current (I_D) of up to 33A at room temperature, ensuring robust performance in demanding applications.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive circuitry.
5. Fast Switching: The device features fast switching speeds, making it ideal for switching power supplies and inverters.
6. Package Type: It is available in a TO-220 package, providing good thermal performance for heat dissipation.
These features make the IPP65R095C7 suitable for automotive, industrial, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. On-Resistance: With a low on-resistance (R_DS(on)) of about 0.095 ohms, it reduces conduction losses and enhances efficiency.
3. Current Capacity: It can handle a continuous drain current (I_D) of up to 33A at room temperature, ensuring robust performance in demanding applications.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive circuitry.
5. Fast Switching: The device features fast switching speeds, making it ideal for switching power supplies and inverters.
6. Package Type: It is available in a TO-220 package, providing good thermal performance for heat dissipation.
These features make the IPP65R095C7 suitable for automotive, industrial, and renewable energy systems.
Pinout
The IPP65R095C7 is a N-channel MOSFET from Infineon, designed for high-performance applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage relative to the source allows current to flow from the drain to the source.
2. Drain (D): This is the main current-carrying terminal where the load is connected. It allows current to flow to the source when the gate is activated.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. The current flows from the drain to the source when the MOSFET is on.
The IPP65R095C7 is particularly noted for its low on-resistance and high-speed switching capabilities, making it suitable for applications in power management and automotive systems.
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage relative to the source allows current to flow from the drain to the source.
2. Drain (D): This is the main current-carrying terminal where the load is connected. It allows current to flow to the source when the gate is activated.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. The current flows from the drain to the source when the MOSFET is on.
The IPP65R095C7 is particularly noted for its low on-resistance and high-speed switching capabilities, making it suitable for applications in power management and automotive systems.
Manufacturer
The IPP65R095C7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and automotive electronics. The company focuses on various industries, such as automotive, industrial, and communication, providing innovative technologies that enhance energy efficiency, mobility, and security. Infineon is known for its commitment to sustainability and plays a significant role in the development of solutions for renewable energy and electric mobility.
Application
The IPP65R095C7 is a N-channel MOSFET used in various applications due to its high efficiency and low RDS(on). Common areas include:
1. Power Supplies: Used in DC-DC converters and power management systems for efficient switching.
2. Motor Control: Utilized in motor drivers for electric vehicles, robotics, and industrial automation.
3. Renewable Energy: Applied in solar inverters and battery management systems.
4. Consumer Electronics: Found in power amplifiers and audio products.
5. LED Lighting: Used in drivers for efficient LED control.
Overall, it excels in applications requiring high efficiency and thermal performance.
1. Power Supplies: Used in DC-DC converters and power management systems for efficient switching.
2. Motor Control: Utilized in motor drivers for electric vehicles, robotics, and industrial automation.
3. Renewable Energy: Applied in solar inverters and battery management systems.
4. Consumer Electronics: Found in power amplifiers and audio products.
5. LED Lighting: Used in drivers for efficient LED control.
Overall, it excels in applications requiring high efficiency and thermal performance.
Package
The IPP65R095C7 is packaged in a TO-247 housing. This package type is designed for high-power applications, providing efficient thermal management and easy mounting in various electronic circuits.
