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IPT012N08N5ATMA1
+Lista de MateriaisMOSFET N-CH 80V 300A 8HSOF
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPT012N08N5ATMA1
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Ficha Técnica IPT012N08N5ATMA1 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 300A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 1.2mOhm @ 150A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 280µA |
| Gate Charge(Qg)(Max) @ Vgs | 223 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 17000 pF @ 40 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
Visão Geral
Description
IPT012N08N5ATMA1 appears to be a product or component identifier, likely used in a technical or industrial context. Although specific information about this exact model number is not readily available, the naming convention suggests it could be a part number or SKU for electronics, machinery, or specialized equipment. In such contexts, the code might refer to specific attributes like size, type, or series within a product line.
To understand its applications or specifications, one should refer to a datasheet or product catalog from the manufacturer. These documents typically provide detailed information about features, compatibility, and usage scenarios. If IPT012N08N5ATMA1 is related to electronics, it might denote a semiconductor, microcontroller, or similar component, and you'd find relevant technical data such as voltage ratings, pin configurations, and thermal characteristics in its datasheet. For accurate identification and application, consulting with the manufacturer or a distributor might be necessary.
To understand its applications or specifications, one should refer to a datasheet or product catalog from the manufacturer. These documents typically provide detailed information about features, compatibility, and usage scenarios. If IPT012N08N5ATMA1 is related to electronics, it might denote a semiconductor, microcontroller, or similar component, and you'd find relevant technical data such as voltage ratings, pin configurations, and thermal characteristics in its datasheet. For accurate identification and application, consulting with the manufacturer or a distributor might be necessary.
Equivalent
The IPT012N08N5ATMA1 is a MOSFET produced by Infineon Technologies. Equivalent products would be those with similar specifications such as voltage, current ratings, and package type. Potential equivalents include:
1. IRFZ44N (International Rectifier / Vishay)
2. NTD4906N (ON Semiconductor)
3. STP80NF10 (STMicroelectronics)
Always verify specific electrical characteristics and packaging requirements to ensure compatibility for your application.
1. IRFZ44N (International Rectifier / Vishay)
2. NTD4906N (ON Semiconductor)
3. STP80NF10 (STMicroelectronics)
Always verify specific electrical characteristics and packaging requirements to ensure compatibility for your application.
Features
The IPT012N08N5ATMA1 is a power MOSFET from Infineon Technologies, typically used for switching applications. Here are some key features:
1. N-Channel MOSFET: Designed for efficient switching, it is an N-channel type transistor.
2. Voltage and Current Ratings: It usually features a drain-source voltage (V_DS) of around 80V and a continuous drain current (I_D) of approximately 120A, making it suitable for high-power applications.
3. Low On-Resistance: This component is designed with low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Fast Switching: Offers rapid switching capabilities that improve performance in high-frequency applications.
5. Package Type: It often comes in a TO-220 package, which offers good thermal performance and ease of mounting.
6. Applications: It is used in applications such as power management, motor control, DC-DC converters, and other high-efficiency power applications.
These features make it suitable for applications requiring efficient power handling and switching. Always refer to the datasheet for precise specifications and ratings.
1. N-Channel MOSFET: Designed for efficient switching, it is an N-channel type transistor.
2. Voltage and Current Ratings: It usually features a drain-source voltage (V_DS) of around 80V and a continuous drain current (I_D) of approximately 120A, making it suitable for high-power applications.
3. Low On-Resistance: This component is designed with low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Fast Switching: Offers rapid switching capabilities that improve performance in high-frequency applications.
5. Package Type: It often comes in a TO-220 package, which offers good thermal performance and ease of mounting.
6. Applications: It is used in applications such as power management, motor control, DC-DC converters, and other high-efficiency power applications.
These features make it suitable for applications requiring efficient power handling and switching. Always refer to the datasheet for precise specifications and ratings.
Pinout
The IPT012N08N5ATMA1 is a power MOSFET transistor produced by Infineon Technologies. It is designed for high-efficiency power conversion applications. The device is encapsulated in a TO-220 package, which typically has three pins. These pins are designated as:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET switches on or off, allowing or blocking current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The current flows out through this terminal. It is often connected to the ground or the negative side of the power supply in many applications.
Overall, the IPT012N08N5ATMA1 MOSFET is used in various applications for switching and amplifying electronic signals in power conversion systems.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET switches on or off, allowing or blocking current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The current flows out through this terminal. It is often connected to the ground or the negative side of the power supply in many applications.
Overall, the IPT012N08N5ATMA1 MOSFET is used in various applications for switching and amplifying electronic signals in power conversion systems.
Manufacturer
The IPT012N08N5ATMA1 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing and producing a wide range of semiconductor solutions. These solutions include microcontrollers, sensors, power semiconductors, and security ICs, which are utilized in various applications across industries such as automotive, industrial power control, power management, and digital security solutions. As a leading company in the semiconductor industry, Infineon focuses on innovation and the development of technologies that address energy efficiency, mobility, and security challenges.
Application
The IPT012N08N5ATMA1 is a power MOSFET used in various applications. Its main application areas include:
1. Automotive Systems: Commonly used in motor drives, power supplies, and battery management systems due to its ability to handle high currents and voltages.
2. Industrial Automation: Utilized in inverters, switch-mode power supplies (SMPS), and motor control systems for efficient power management.
3. Consumer Electronics: Used in power adapters, LED drivers, and other power management applications.
4. Renewable Energy Systems: Employed in solar inverters and other renewable energy conversion systems for efficient energy handling.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
1. Automotive Systems: Commonly used in motor drives, power supplies, and battery management systems due to its ability to handle high currents and voltages.
2. Industrial Automation: Utilized in inverters, switch-mode power supplies (SMPS), and motor control systems for efficient power management.
3. Consumer Electronics: Used in power adapters, LED drivers, and other power management applications.
4. Renewable Energy Systems: Employed in solar inverters and other renewable energy conversion systems for efficient energy handling.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
Package
The IPT012N08N5ATMA1 is a power MOSFET, and its package type is typically a TO-220, which is a common package for power transistors. This package type is designed for easy mounting and efficient heat dissipation, suitable for various electronic applications requiring effective power management.
