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IR2183SPBF
+Lista de MateriaisIC GATE DRVR HALF-BRIDGE 8SOIC
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FabricanteTecnologias Infineon
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Peça do Fabricante #IR2183SPBF
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Ficha Técnica IR2183SPBF DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Not For New Designs |
| Digi Key Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.7V |
| Current - Peak Output (Source, Sink) | 1.9A, 2.3A |
| Input Type | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Rise / Fall Time (Typ) | 40ns, 20ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | IR2183 |
Visão Geral
Description
Key features include a low-voltage logic input, enabling compatibility with various control signals, and built-in protection features like undervoltage lockout (UVLO) for enhanced reliability. The IR2183SPBF is designed for high efficiency and minimal power loss, facilitating effective thermal management.
It is available in a compact package, making it ideal for space-constrained applications. Overall, the IR2183SPBF is a versatile and robust solution for driving high-power MOSFETs in a range of industrial and consumer applications.
Equivalent
Features
1. High Voltage Range: Operates with a maximum supply voltage of 600V.
2. High-Speed Operation: Capable of driving up to 2A output current for quick switching.
3. Bootstrap Capability: Integrated bootstrap circuit allows for efficient high-side driver operation.
4. Dead Time Control: Features built-in dead time to prevent shoot-through in half-bridge configurations.
5. Under-Voltage Lockout (UVLO): Protects against low supply voltage conditions, ensuring reliable operation.
6. Thermal Shutdown: Provides protection against overheating.
7. Low Input Threshold: Compatible with TTL/CMOS logic levels.
8. Integrated Features: Includes level shifting for high-side driving applications and a simple layout for ease of integration.
These features make the IR2183SPBF suitable for various applications, including motor drives, power inverters, and industrial automation systems.
Pinout
1. VCC - Supply Voltage for the high-side and low-side drivers.
2. VBS - Bootstrap supply voltage for the high-side driver.
3. HO - High-side output driver, used to drive the gate of the high-side MOSFET/IGBT.
4. LO - Low-side output driver, used to drive the gate of the low-side MOSFET/IGBT.
5. COM - Common ground reference for low-side and high-side drivers.
6. HS - High-side switch node connection.
7. VS - High-side source terminal connection, used for the bootstrap circuit.
8. BOOT - Bootstrap capacitor connection for the high-side driver.
The IR2183SPBF is commonly used in half-bridge and full-bridge applications in power electronics.
Manufacturer
The IR2183SPBF is a high and low side driver designed for driving MOSFETs and IGBTs in power management applications, particularly in motor control, power supplies, and inverter circuits. Texas Instruments focuses on providing solutions that enhance performance, efficiency, and reliability in electronic designs. The company is also dedicated to sustainability and responsible manufacturing practices, making it a prominent player in the semiconductor industry.
Application
1. Motor Drives: Used in brushless DC motors and stepper motors for efficient control.
2. Power Inverters: Employed in photovoltaic systems and UPS applications for converting DC to AC.
3. Switching Power Supplies: Utilized in high-frequency power supplies for improved efficiency.
4. Class D Audio Amplifiers: Drives output stages for enhanced audio performance.
5. Industrial Equipment: Applied in various automation and control systems.
Overall, it is vital in high-power applications requiring robust and efficient switching.