IRF520PBF

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IRF520PBF

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MOSFET N-CH 100V 9.2A TO220AB

  • FabricanteVishay Siliconix

  • Peça do Fabricante #IRF520PBF

  • Pacote TO-220-3

  • Em Estoque2435

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Especificações

Atributo Valor
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 9.2A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 270mOhm @ 5.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 16 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Visão Geral

Description

The IRF520PBF is an N-channel power MOSFET designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V drain-to-source (VDSS).
- Current Handling: Up to 9.7A continuous (ID).
- Low On-Resistance: 0.27Ω (RDS(on)) for reduced power loss.
- Fast Switching: Suitable for PWM, motor control, and DC-DC converters.
- Package: TO-220AB for easy mounting and heat dissipation.
Common uses include relay drivers, LED controllers, and power management circuits. It requires a gate voltage (VGS) of 10V for full enhancement. Always use a gate resistor to prevent oscillations.
*Note: PBF denotes lead-free (RoHS-compliant) construction.*

Equivalent

Equivalent products to the IRF520PBF MOSFET include:
- IRF520NPBF (similar specs, different package)
- IRF530PBF (higher current rating)
- IRF540PBF (higher voltage/current)
- STP55NF06L (similar specs, lower RDS(on))
- FQP30N06L (comparable N-channel MOSFET)
These alternatives offer similar or improved performance in switching applications. Always check datasheets for exact compatibility.

Features

The IRF520PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V drain-to-source (VDSS)
- Current Handling: 9.7A continuous drain current (ID) at 25°C
- Low On-Resistance: 0.27Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-speed applications
- Gate Threshold Voltage: 2-4V (VGS(th))
- Power Dissipation: 60W (TC = 25°C)
- Package: TO-220AB (through-hole, easy to mount)
- Avalanche Rated: Robust against inductive loads
Commonly used in power switching, motor control, and amplifier circuits. Requires proper heat sinking for high-current applications.

Application

The IRF520PBF, an N-channel MOSFET, is commonly used in:
1. Switching Circuits – Power supplies, motor drivers, and relay replacements.
2. Amplifiers – Audio and RF amplification in low to medium power applications.
3. DC-DC Converters – Boost/buck converters for voltage regulation.
4. LED Drivers – Controlling high-power LED arrays.
5. Automotive Systems – Electronic ignition and load switching.
6. Hobbyist Projects – Arduino/Raspberry Pi-based power control.
With a 100V drain-source voltage and 9.7A current rating, it suits medium-power applications requiring efficient switching.

Package

The IRF520PBF is packaged in a TO-220AB through-hole package. This package type is widely used for power transistors, offering good thermal performance and ease of mounting on PCBs or heat sinks. The "PBF" suffix indicates it is lead-free, complying with RoHS standards. The TO-220AB package has three leads and a metal tab for heat dissipation.

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