IRF540NSTRRPBF

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IRF540NSTRRPBF

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MOSFET N-CH 100V 33A D2PAK

  • FabricanteTecnologias Infineon

  • Peça do Fabricante #IRF540NSTRRPBF

  • Em Estoque6405

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Especificações

Atributo Valor
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 33A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 44mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 71 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1960 pF @ 25 V
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

Visão Geral

Description

IRF540NSTRRPBF is an N-channel power MOSFET from International Rectifier (now Infineon). It’s an enhancement-mode device used for high-voltage switching.
Key points:
- Vds: 100 V; Id: about 14 A (depends on case temperature).
- Rds(on): around 0.077 Ω typ at Vgs = 10 V (low conduction losses at higher gate drive).
- Gate drive: not a logic-level device; typically needs ~8–10 V for low Rdson; Vgs(th) ~ 2–4 V.
- Package/finish: Pb-free, tape-and-reel option (STRRPBF); commonly in a TO-220AB-type through-hole package.
- Applications: switch-mode power supplies, DC-DC converters, motor drivers, high-voltage switching.
- Designing tips: provide adequate heat sinking, gate protection and proper SOA consideration; review datasheet for avalanche rating and safe operating area.
If you’re selecting it, verify exact package, current at your temp, and drive voltage from the latest datasheet.

Equivalent

Direct equivalent: IRF540N (same IRF540 family / Pb‑free suffix variants like IRF540NPbF). Close substitutes (verify full specs — VDS, RDS(on), Id, Qg, package): IRFZ44N, FQP30N06L, STP55NF06. Always compare datasheets before substituting.

Features

IRF540NSTRRPBF is an N-channel enhancement-mode power MOSFET. Key features:
- VDS = 100 V; ID (continuous) ≈ 14 A
- RDS(on) ≈ 0.077 Ω (typ) at VGS = 10 V (max ~0.1–0.12 Ω)
- Gate threshold ≈ 2.0–4.0 V
- Not a logic-level device; requires around 10 V gate drive for full conduction
- Avalanche energy rugged and suitable for switching applications
- Fast switching capability with low gate charge
- Pb-free / RoHS-compliant package (STRRPBF)
Typical uses: switching regulators, motor control, DC-DC converters, power supplies. Note: exact RDS(on) and performance depend on temperature and VGS drive.

Pinout

Pin count: 3.
Pin functions:
- Pin 1 — Gate (G): control/input terminal that modulates the channel.
- Pin 2 — Drain (D): main current-carrying terminal; typically connected to the package tab/heatsink.
- Pin 3 — Source (S): return/reference terminal for the device.
Note: IRF540NSTRRPBF is an N‑channel enhancement MOSFET; common packages (TO‑220, DPAK/TO‑252) use the same pin ordering: 1=Gate, 2=Drain (tab), 3=Source.

Manufacturer

The IRF540NSTRRPBF is manufactured by Infineon Technologies (the IR/International Rectifier product line). Infineon is a German multinational semiconductor company that designs and manufactures power semiconductors, automotive and industrial ICs, microcontrollers and security solutions — with a strong focus on power management, discrete power MOSFETs and system-level solutions for automotive, industrial, and consumer applications.

Application

IRF540NSTRRPBF is a 100 V, ~14 A N-channel power MOSFET (TO-220/lead-free). Typical application areas:
- Switching power supplies and DC-DC converters (buck/boost/buck‑boost)
- Power management circuits, load switches, pre-regulators
- Motor control (DC motors, small stepper drives)
- Inverters and renewable energy electronics (solar charge controllers, UPS)
- Class D audio output stages and other high‑current switching tasks
In short: general-purpose high-voltage, moderate-current switching and amplification applications.

Package

TO-220AB through-hole package (Pb-free/RoHS-compliant).

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