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IRF640NSPBF
+Lista de MateriaisMOSFET N-CH 200V 18A D2PAK
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF640NSPBF
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Ficha Técnica IRF640NSPBF DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tube,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1160 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Visão Geral
Description
The IRF640NSPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is used in a variety of high-power electronic applications due to its high efficiency and robust design. The device features an N-channel configuration and operates with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 18A. It exhibits low on-state resistance, which minimizes power loss during operation, making it ideal for switching and amplifying applications. The MOSFET comes in a TO-220 package, which is known for its ease of mounting and effective heat dissipation. Additionally, the IRF640NSPBF is RoHS compliant, ensuring it meets environmental and safety standards. This MOSFET is commonly used in power supplies, motor drives, and other applications requiring fast switching speeds and high power handling capabilities. Its reliability and performance make it a popular choice among engineers and designers in the field of electronics.
Equivalent
The IRF640NSPBF is an N-channel MOSFET commonly used for switching applications. Equivalent products include the STMicroelectronics STP16NF06, ON Semiconductor NTP6410N, and Infineon IPP110N20N3G. When selecting a substitute, ensure voltage, current ratings, and RDS(on) values are similar to maintain compatibility in your specific application. Always verify the specifications in the manufacturer's datasheets to confirm suitability.
Features
The IRF640NSPBF is a power MOSFET designed for efficient switching applications. Key features include:
1. N-Channel MOSFET: It is an N-channel MOSFET, which makes it suitable for high-speed switching.
2. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 200V and a continuous drain current (I_D) of 18A at 25°C.
3. Low On-Resistance: The device features a low R_DS(on) of 0.18 ohms, ensuring reduced power loss and increased efficiency.
4. Fast Switching: Its design supports fast switching speeds, making it ideal for high-frequency applications.
5. RoHS Compliant: The component is lead-free and meets RoHS standards, adhering to environmental safety requirements.
6. Package: It is typically available in a TO-220 package, which offers good thermal performance and ease of use in circuit designs.
7. Thermal Resistance: The junction-to-case thermal resistance is low, facilitating efficient heat dissipation.
These features make the IRF640NSPBF suitable for various applications, including power management, DC-DC converters, and motor controllers.
1. N-Channel MOSFET: It is an N-channel MOSFET, which makes it suitable for high-speed switching.
2. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 200V and a continuous drain current (I_D) of 18A at 25°C.
3. Low On-Resistance: The device features a low R_DS(on) of 0.18 ohms, ensuring reduced power loss and increased efficiency.
4. Fast Switching: Its design supports fast switching speeds, making it ideal for high-frequency applications.
5. RoHS Compliant: The component is lead-free and meets RoHS standards, adhering to environmental safety requirements.
6. Package: It is typically available in a TO-220 package, which offers good thermal performance and ease of use in circuit designs.
7. Thermal Resistance: The junction-to-case thermal resistance is low, facilitating efficient heat dissipation.
These features make the IRF640NSPBF suitable for various applications, including power management, DC-DC converters, and motor controllers.
Pinout
The IRF640NSPBF is a power MOSFET transistor commonly used for switching and amplification purposes in electronic circuits. It is manufactured by Infineon Technologies and others. The device comes in a TO-220 package and features three pins: Gate (G), Drain (D), and Source (S).
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It's connected to the load in many applications.
3. Source (S): The current exits through this pin and it is typically connected to the ground in most configurations.
The IRF640NSPBF is designed for high-speed switching and offers low on-state resistance, making it suitable for various power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It's connected to the load in many applications.
3. Source (S): The current exits through this pin and it is typically connected to the ground in most configurations.
The IRF640NSPBF is designed for high-speed switching and offers low on-state resistance, making it suitable for various power applications.
Manufacturer
The IRF640NSPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of products, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various industries such as automotive, industrial, consumer electronics, and communication. Infineon is recognized for its innovation and leadership in the semiconductor industry, providing solutions that enhance energy efficiency, mobility, and security.
Application
The IRF640NSPBF is a power MOSFET used in various applications due to its high-speed switching and low on-resistance. Common application areas include:
1. Switching Power Supplies: Used in DC-DC converters and power management systems.
2. Motor Control: Drives motors in industrial and consumer electronics.
3. Audio Amplifiers: Acts as an efficient switch in Class D amplifiers.
4. Inverters: Converts DC to AC in renewable energy systems, like solar inverters.
5. LED Lighting: Controls LED dimming and switching operations.
6. Battery Chargers: Used in charging circuits for efficient power management.
Its reliability and efficiency make it suitable for both consumer electronics and industrial applications.
1. Switching Power Supplies: Used in DC-DC converters and power management systems.
2. Motor Control: Drives motors in industrial and consumer electronics.
3. Audio Amplifiers: Acts as an efficient switch in Class D amplifiers.
4. Inverters: Converts DC to AC in renewable energy systems, like solar inverters.
5. LED Lighting: Controls LED dimming and switching operations.
6. Battery Chargers: Used in charging circuits for efficient power management.
Its reliability and efficiency make it suitable for both consumer electronics and industrial applications.
Package
The IRF640NSPBF is packaged in a TO-262 form factor. This is a type of transistor outline package typically used for mounting power transistors and similar components, offering efficient heat dissipation.
