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IRF6726MTRPBF
+Lista de MateriaisMOSFET N-CH 30V 32A DIRECTFET
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF6726MTRPBF
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Ficha Técnica IRF6726MTRPBF DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.7mOhm @ 32A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 77 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6140 pF @ 15 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MT |
Visão Geral
Description
The IRF6726MTRPBF is a power MOSFET transistor developed by Infineon Technologies, suitable for high-efficiency power management applications. It belongs to the HEXFET® series, known for their excellent on-state resistance and fast switching capabilities. This particular model is housed in a TO-252 package, which aids in efficient thermal management, making it an ideal component for compact designs.
Key specifications include a drain-to-source voltage (V_ds) rating of 30V and a continuous drain current (I_d) of up to 90A, making it well-suited for low-voltage, high-current applications. The IRF6726MTRPBF also features a low R_ds(on) value, which minimizes conduction losses and enhances overall efficiency.
Widely used in DC-DC converters, motor controllers, and power supply units, the transistor's reliability and robust performance make it a preferred choice for both industrial and consumer electronics. The IRF6726MTRPBF exemplifies a balance of power handling, efficiency, and size adaptability, making it a versatile component for various electronic applications.
Key specifications include a drain-to-source voltage (V_ds) rating of 30V and a continuous drain current (I_d) of up to 90A, making it well-suited for low-voltage, high-current applications. The IRF6726MTRPBF also features a low R_ds(on) value, which minimizes conduction losses and enhances overall efficiency.
Widely used in DC-DC converters, motor controllers, and power supply units, the transistor's reliability and robust performance make it a preferred choice for both industrial and consumer electronics. The IRF6726MTRPBF exemplifies a balance of power handling, efficiency, and size adaptability, making it a versatile component for various electronic applications.
Equivalent
The IRF6726MTRPBF is a N-channel MOSFET. Equivalent products include:
1. NXP PSMN4R8-100BSE: Similar voltage and current ratings.
2. ON Semiconductor NTP65N06R: Comparable specs with similar applications.
3. Vishay SiHP33N60E: Offers similar performance.
4. STMicroelectronics STP60NF06: Often used in similar applications.
Please verify the specific electrical parameters and package details to ensure compatibility with your application.
1. NXP PSMN4R8-100BSE: Similar voltage and current ratings.
2. ON Semiconductor NTP65N06R: Comparable specs with similar applications.
3. Vishay SiHP33N60E: Offers similar performance.
4. STMicroelectronics STP60NF06: Often used in similar applications.
Please verify the specific electrical parameters and package details to ensure compatibility with your application.
Features
The IRF6726MTRPBF is a power MOSFET designed for high efficiency and performance. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
3. Current Rating: It supports a continuous drain current (I_D) of 96A.
4. R_DS(on): The on-state resistance is low, typically around 6.0 mΩ, reducing power losses.
5. Package: Available in a TO-252 package, offering compact size and ease of mounting.
6. Applications: Suitable for applications such as DC-DC converters, synchronous rectification, and motor drives.
7. Thermal Performance: Features good thermal resistance characteristics, aiding in heat dissipation.
8. Gate Charge: Low gate charge for efficient switching, enhancing overall power efficiency.
9. Lead-Free: The device is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRF6726MTRPBF a versatile choice for various power management applications in electronics.
1. Type: N-channel MOSFET.
2. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
3. Current Rating: It supports a continuous drain current (I_D) of 96A.
4. R_DS(on): The on-state resistance is low, typically around 6.0 mΩ, reducing power losses.
5. Package: Available in a TO-252 package, offering compact size and ease of mounting.
6. Applications: Suitable for applications such as DC-DC converters, synchronous rectification, and motor drives.
7. Thermal Performance: Features good thermal resistance characteristics, aiding in heat dissipation.
8. Gate Charge: Low gate charge for efficient switching, enhancing overall power efficiency.
9. Lead-Free: The device is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRF6726MTRPBF a versatile choice for various power management applications in electronics.
Pinout
The IRF6726MTRPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies, previously under International Rectifier. It is part of the HEXFET® Power MOSFET family and is designed for use in various electronic applications.
Pin Count and Function:
- Package Type: The IRF6726MTRPBF comes in a DirectFET® package, specifically the Medium Size Can (MZ) package.
- Pin Count: Typically, the DirectFET package does not have traditional pin counts like other packages. Instead, it has contact pads.
- Main Contacts:
- Source (S): Multiple source pads.
- Gate (G): One gate pad.
- Drain (D): The drain is connected through the substrate.
Function:
The IRF6726MTRPBF is designed for high efficiency and low on-resistance applications, making it suitable for use in synchronous rectification, DC-DC converters, and power management applications. Its DirectFET® packaging allows for improved thermal performance and higher power density due to reduced parasitic inductance and resistance.
Pin Count and Function:
- Package Type: The IRF6726MTRPBF comes in a DirectFET® package, specifically the Medium Size Can (MZ) package.
- Pin Count: Typically, the DirectFET package does not have traditional pin counts like other packages. Instead, it has contact pads.
- Main Contacts:
- Source (S): Multiple source pads.
- Gate (G): One gate pad.
- Drain (D): The drain is connected through the substrate.
Function:
The IRF6726MTRPBF is designed for high efficiency and low on-resistance applications, making it suitable for use in synchronous rectification, DC-DC converters, and power management applications. Its DirectFET® packaging allows for improved thermal performance and higher power density due to reduced parasitic inductance and resistance.
Manufacturer
The IRF6726MTRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company known for its innovative solutions in the automotive, industrial, consumer electronics, and security sectors. The company specializes in producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and security ICs. Infineon's products are widely used in various applications, such as power management, automotive electronics, communication systems, and more, contributing significantly to energy efficiency and mobility advancements.
Application
The IRF6726MTRPBF is a power MOSFET commonly used in applications requiring efficient power management and conversion. Its primary application areas include:
1. Power Supply Units: Utilized in both AC-DC and DC-DC converters for efficient energy conversion.
2. Motor Drives: Suitable for controlling DC motors due to its fast switching capabilities.
3. Telecommunications: Used in power management systems within telecom infrastructure.
4. Industrial Automation: Supports automated systems requiring precise power control.
5. Consumer Electronics: Embedded in devices needing reliable power regulation, such as laptops and desktops.
6. Renewable Energy Systems: Integrated into solar inverters for converting solar energy efficiently.
These applications benefit from the MOSFET's low on-resistance and high-speed switching properties.
1. Power Supply Units: Utilized in both AC-DC and DC-DC converters for efficient energy conversion.
2. Motor Drives: Suitable for controlling DC motors due to its fast switching capabilities.
3. Telecommunications: Used in power management systems within telecom infrastructure.
4. Industrial Automation: Supports automated systems requiring precise power control.
5. Consumer Electronics: Embedded in devices needing reliable power regulation, such as laptops and desktops.
6. Renewable Energy Systems: Integrated into solar inverters for converting solar energy efficiently.
These applications benefit from the MOSFET's low on-resistance and high-speed switching properties.
Package
The IRF6726MTRPBF is a HEXFET power MOSFET packaged in an 8-pin SOIC (Small Outline Integrated Circuit) package. This package type is designed for surface-mount technology, providing a compact and efficient solution for electronic circuit designs.
