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IRF7201TRPBF
+Lista de MateriaisMOSFET N-CH 30V 7.3A 8SO
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7201TRPBF
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Ficha Técnica IRF7201TRPBF DataSheet
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Especificações
| Atributo | Valor |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF7201 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
Key characteristics of the IRF7201TRPBF include a low on-resistance, which minimizes power losses and enhances efficiency, and a fast switching speed, which is beneficial for high-frequency applications. It has a maximum drain-source voltage (V_ds) of 30V and can handle continuous drain currents up to 4.3A per channel, making it suitable for moderate power applications. The MOSFET comes in a standard SO-8 surface-mount package, facilitating easy integration into printed circuit boards (PCBs).
Overall, the IRF7201TRPBF is praised for its reliable performance, compact size, and versatility in various electronic applications, making it a popular choice for engineers and designers seeking efficient power management solutions.
Equivalent
Features
1. Voltage and Current Ratings: It can handle a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.3A per channel.
2. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of 0.035 ohms, ensuring minimal power loss during operation.
3. Gate Threshold Voltage: It features a gate threshold voltage in the range of 1V to 3V, enabling it to operate efficiently with standard logic level gate inputs.
4. Package: Encased in a compact SO-8 surface mount package, the IRF7201TRPBF is suitable for space-constrained applications.
5. Thermal Performance: Its design supports efficient heat dissipation, which contributes to reliable performance under various thermal conditions.
6. Applications: Ideal for DC-DC converters, load switches, and other power management applications.
These features make the IRF7201TRPBF a reliable choice for designers looking to integrate efficient and compact power control solutions.
Pinout
1. Pins 1 and 8: These are the Drain (D1 and D2) connections for the first and second MOSFET, respectively.
2. Pins 2 and 7: These are the Source (S1 and S2) connections for the first and second MOSFET, respectively.
3. Pins 3 and 6: These are the Gate (G1 and G2) connections for the first and second MOSFET, respectively.
4. Pins 4 and 5: These are usually connected internally to the Source of the first and second MOSFETs, serving as a thermal and electrical linkage.
The IRF7201 is used in various applications requiring efficient power management, offering features like low on-resistance and fast switching, which are typically beneficial in DC-DC converters and load switch applications.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Automotive: Ideal for electronic control units and motor drives due to its robustness.
3. Consumer Electronics: Employed in power supplies for devices like TVs and computers.
4. Industrial Equipment: Utilized in motor controls and power inverters for machinery.
5. Telecommunications: Supports power amplification and signal processing in communication devices.
Its low on-resistance and fast switching make it suitable for applications requiring efficient power handling.