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IRF7341PBF
+Lista de MateriaisMOSFET 2N-CH 55V 4.7A 8-SOIC
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7341PBF
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Ficha Técnica IRF7341PBF DataSheet
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Pacote SOIC-8
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Especificações
| Atributo | Valor |
| Supplier | Rochester Electronics, LLC,Infineon Technologies |
| Package | Bulk,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 55V |
| Current-ContinuousDrain(Id)@25°C | 4.7A |
| RdsOn(Max)@IdVgs | 50mOhm @ 4.7A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 740pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Visão Geral
Description
The IRF7341PBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in low-voltage electronic applications. Manufactured by Infineon Technologies, this component is part of their HEXFET® Power MOSFET series, known for high efficiency and reliability. The device is encapsulated in a SO-8 package, making it well-suited for surface-mount applications.
Key features of the IRF7341PBF include a low on-resistance, which reduces power loss and heat generation, and a fast switching speed, enhancing performance in switching applications. It operates with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 5.3A at 25°C.
Typical applications for the IRF7341PBF include power management tasks, DC-DC converters, load switches, and other electronic circuit designs where space efficiency and performance are critical. Its compact size and robust electrical characteristics make it a popular choice for designers looking to optimize power efficiency and reliability in their circuits.
Key features of the IRF7341PBF include a low on-resistance, which reduces power loss and heat generation, and a fast switching speed, enhancing performance in switching applications. It operates with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 5.3A at 25°C.
Typical applications for the IRF7341PBF include power management tasks, DC-DC converters, load switches, and other electronic circuit designs where space efficiency and performance are critical. Its compact size and robust electrical characteristics make it a popular choice for designers looking to optimize power efficiency and reliability in their circuits.
Equivalent
The IRF7341PBF is a dual N-channel MOSFET commonly used for various electronic applications. Equivalent or similar products include:
1. NXP PMN70XP
2. Vishay Si4926DY
3. Fairchild FDS8958A
4. Diodes Inc. DMG3415U
5. ON Semiconductor NTD5867NL
These alternatives have similar electrical characteristics and may be suitable replacements depending on the specific requirements of your application. Always verify pin configurations and specifications before substituting.
1. NXP PMN70XP
2. Vishay Si4926DY
3. Fairchild FDS8958A
4. Diodes Inc. DMG3415U
5. ON Semiconductor NTD5867NL
These alternatives have similar electrical characteristics and may be suitable replacements depending on the specific requirements of your application. Always verify pin configurations and specifications before substituting.
Features
The IRF7341PBF is a dual N-channel MOSFET that offers several key features, making it suitable for various applications:
1. Dual N-Channel MOSFET: It contains two independent N-channel MOSFETs in a single package, simplifying circuit design.
2. Low On-Resistance: It features low on-resistance, which reduces power loss and improves efficiency in power conversion applications.
3. Fast Switching Speed: This characteristic enables high-frequency operation, beneficial for switching applications.
4. Compact Package: The device comes in a compact SO-8 package, which saves board space and is suitable for space-constrained applications.
5. High Current Capability: It can handle relatively high currents, making it suitable for applications that require substantial power handling.
6. RoHS Compliant: The device is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
7. Thermal Performance: Designed for efficient thermal performance, which enhances reliability and longevity in demanding applications.
These features make the IRF7341PBF ideal for power management, load switching, and other applications requiring efficient and compact high-performance MOSFETs.
1. Dual N-Channel MOSFET: It contains two independent N-channel MOSFETs in a single package, simplifying circuit design.
2. Low On-Resistance: It features low on-resistance, which reduces power loss and improves efficiency in power conversion applications.
3. Fast Switching Speed: This characteristic enables high-frequency operation, beneficial for switching applications.
4. Compact Package: The device comes in a compact SO-8 package, which saves board space and is suitable for space-constrained applications.
5. High Current Capability: It can handle relatively high currents, making it suitable for applications that require substantial power handling.
6. RoHS Compliant: The device is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
7. Thermal Performance: Designed for efficient thermal performance, which enhances reliability and longevity in demanding applications.
These features make the IRF7341PBF ideal for power management, load switching, and other applications requiring efficient and compact high-performance MOSFETs.
Pinout
The IRF7341PBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification purposes. It comes in an SO-8 package, which contains 8 pins in total. The key functions of this dual MOSFET include:
1. Pins 1, 2, 3 (Source 1): These are the source terminals for the first MOSFET (Q1) within the dual package.
2. Pin 4 (Gate 1): This is the gate terminal for the first MOSFET (Q1), which controls its operation.
3. Pin 5 (Gate 2): This is the gate terminal for the second MOSFET (Q2).
4. Pins 6, 7, 8 (Source 2): These serve as the source terminals for the second MOSFET (Q2).
Both MOSFETs share a common drain (not visible externally as a pin) internally in the package. The IRF7341PBF is often used for applications requiring efficient power switching, such as in DC-DC converters, power management in portable devices, and motor control circuits.
1. Pins 1, 2, 3 (Source 1): These are the source terminals for the first MOSFET (Q1) within the dual package.
2. Pin 4 (Gate 1): This is the gate terminal for the first MOSFET (Q1), which controls its operation.
3. Pin 5 (Gate 2): This is the gate terminal for the second MOSFET (Q2).
4. Pins 6, 7, 8 (Source 2): These serve as the source terminals for the second MOSFET (Q2).
Both MOSFETs share a common drain (not visible externally as a pin) internally in the package. The IRF7341PBF is often used for applications requiring efficient power switching, such as in DC-DC converters, power management in portable devices, and motor control circuits.
Manufacturer
The IRF7341PBF is manufactured by Infineon Technologies. Infineon is a semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor solutions used in various applications, including automotive, industrial power control, power management, and digital security solutions. It is known for producing components such as microcontrollers, sensors, and power semiconductors. Infineon is headquartered in Neubiberg, Germany, and is recognized as one of the leading semiconductor companies globally, focusing on innovation and sustainability in electronic solutions.
Application
The IRF7341PBF is a dual N-channel MOSFET commonly used in various applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits.
2. Motor Control: Suitable for driving small motors in consumer electronics.
3. Switching Applications: Utilized in load switches and power switching applications due to its low on-resistance and fast switching capabilities.
4. Battery-Powered Devices: Ideal for portable electronics due to its efficient power handling.
5. Signal Amplification: Employed in amplification circuits due to its high-frequency performance.
These applications leverage the MOSFET's efficiency, low conduction losses, and reliability.
1. Power Management: Used in DC-DC converters and voltage regulation circuits.
2. Motor Control: Suitable for driving small motors in consumer electronics.
3. Switching Applications: Utilized in load switches and power switching applications due to its low on-resistance and fast switching capabilities.
4. Battery-Powered Devices: Ideal for portable electronics due to its efficient power handling.
5. Signal Amplification: Employed in amplification circuits due to its high-frequency performance.
These applications leverage the MOSFET's efficiency, low conduction losses, and reliability.
Package
The IRF7341PBF is a Dual N-Channel MOSFET that comes in a standard surface-mount package known as the SO-8 (Small Outline-8). This package is designed for efficient thermal performance and compact size, suitable for applications requiring space-saving solutions.
