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IRF7509TRPBF
+Lista de MateriaisMOSFET N/P-CH 30V 2.7A/2A MICRO8
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7509TRPBF
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Ficha Técnica IRF7509TRPBF DataSheet
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Pacote TSSOP-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A, 2A |
| Rds On(Max) @ Id Vgs | 110mOhm @ 1.7A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 210pF @ 25V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the IRF7509TRPBF include:
1. Dual N-Channel: Contains two N-channel MOSFETs in a single package, optimizing space and efficiency.
2. Low On-Resistance (R_ds(on)): This attribute minimizes power loss and heat generation, improving overall efficiency.
3. Compact Size: Packaged in a small SO-8 surface-mount package, suitable for space-constrained designs.
4. High-Speed Switching: Facilitates rapid transitions between on and off states, enhancing performance in high-frequency applications.
5. RoHS Compliant: Environmentally friendly, meeting the Restriction of Hazardous Substances standards.
The IRF7509TRPBF is widely used in consumer electronics, automotive systems, and industrial controls due to its reliability and efficiency.
Equivalent
1. FDMS86200 - by ON Semiconductor
2. BUK9Y53-60E - by NXP Semiconductors
3. Si4946EY - by Vishay Siliconix
4. FDS6982S - by ON Semiconductor
Ensure these equivalents match the specific electrical and thermal characteristics required for your application. Always check the datasheets for detailed specifications.
Features
1. Dual N-Channel: Contains two MOSFETs in a single package, optimizing space and efficiency.
2. Low On-Resistance: Features a low R_DS(on), enhancing performance by reducing power loss and heat generation.
3. Logic Level Gate Drive: Compatible with low voltage drive signals, making it suitable for direct interfacing with microcontrollers and other logic devices.
4. Fast Switching Speed: Provides rapid switching capabilities, which is crucial for high-efficiency power supplies and DC-DC converters.
5. SO-8 Package: Comes in a compact SO-8 surface-mount package, ideal for space-constrained applications.
6. RoHS Compliant: Environmentally friendly, adhering to the Restriction of Hazardous Substances directive.
7. Applications: Suitable for a variety of uses, including power management in portable devices, motor drives, and load switching.
These features make the IRF7509TRPBF a versatile component in modern electronic designs.
Pinout
Here is a concise description of the pin configuration and function:
1. Pins 1, 2, and 3: These are the Source pins for the first MOSFET (Q1).
2. Pin 4: This is the Gate pin for Q1, used to control the MOSFET's switching.
3. Pin 5: This is the Gate pin for the second MOSFET (Q2).
4. Pins 6, 7, and 8: These are the Drain pins for both MOSFETs. In many dual MOSFET configurations like this, the Drains are internally connected.
The IRF7509TRPBF is often used in applications like DC-DC converters and other switching applications due to its efficiency and reliability.
Manufacturer
Application
1. Power Management: Employed in DC-DC converters and voltage regulation modules.
2. Consumer Electronics: Used in devices requiring efficient power conversion.
3. Automotive Systems: Supports applications like motor control and power distribution.
4. Industrial Equipment: Facilitates efficient power handling and switching.
5. Computing and Networking: Utilized in power supply units and server systems for energy efficiency.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency and high-speed applications.