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IRF7749L1TRPBF
+Lista de MateriaisIRF7749 - 12V-300V N-CHANNEL POW
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FabricanteRectificador Internacional
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Peça do Fabricante #IRF7749L1TRPBF
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Ficha Técnica IRF7749L1TRPBF DataSheet
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 33A (Ta), 200A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5mOhm @ 120A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 300 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 12320 pF @ 25 V |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric L8 |
Visão Geral
Description
The IRF7749L1TRPBF is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency switching applications, commonly used in power management systems, automotive, and industrial applications. The device features a low on-resistance and high current-carrying capability which makes it suitable for high-performance and high-power applications. The advanced MOSFET technology ensures fast switching speeds and improved performance. The IRF7749L1TRPBF is encapsulated in a D2PAK package, providing a compact solution for surface-mounted applications with efficient heat dissipation. Additionally, it is designed to handle high voltages and currents, making it reliable in demanding environments. The part suffix "PBF" indicates that it is lead-free, complying with environmental regulations such as RoHS. Overall, this MOSFET is chosen for its balance of efficiency, reliability, and compact design in electronic circuit applications.
Equivalent
The IRF7749L1TRPBF is a power MOSFET. Equivalent products typically have similar specifications such as voltage, current, and package type. Some possible equivalents include:
1. NXP BUK7Y59-60E
2. STMicroelectronics STP55NF06L
3. ON Semiconductor NTD6416AN
4. Vishay Siliconix SiHP33N60E
When considering replacements, ensure the alternative matches the original component's key parameters and ratings. Always verify compatibility with the specific application.
1. NXP BUK7Y59-60E
2. STMicroelectronics STP55NF06L
3. ON Semiconductor NTD6416AN
4. Vishay Siliconix SiHP33N60E
When considering replacements, ensure the alternative matches the original component's key parameters and ratings. Always verify compatibility with the specific application.
Features
The IRF7749L1TRPBF is a HEXFET power MOSFET from Infineon Technologies, designed for improved performance in electronic devices. Here are some of its key features:
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of around 40V and can handle a continuous drain current (I_D) of approximately 120A.
2. Low On-Resistance: The MOSFET boasts a low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
3. Package: The device is available in a DirectFET package, allowing for compact designs and efficient heat dissipation.
4. Thermal Performance: The DirectFET package provides excellent thermal performance, making it suitable for high-power applications.
5. Applications: It is commonly used in high-efficiency power supply units, DC-DC converters, and motor control applications.
6. Ruggedness: The MOSFET is designed to withstand extreme conditions, ensuring reliability and longevity in various applications.
These features make the IRF7749L1TRPBF suitable for use in demanding environments where efficiency, size, and thermal management are critical.
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) of around 40V and can handle a continuous drain current (I_D) of approximately 120A.
2. Low On-Resistance: The MOSFET boasts a low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
3. Package: The device is available in a DirectFET package, allowing for compact designs and efficient heat dissipation.
4. Thermal Performance: The DirectFET package provides excellent thermal performance, making it suitable for high-power applications.
5. Applications: It is commonly used in high-efficiency power supply units, DC-DC converters, and motor control applications.
6. Ruggedness: The MOSFET is designed to withstand extreme conditions, ensuring reliability and longevity in various applications.
These features make the IRF7749L1TRPBF suitable for use in demanding environments where efficiency, size, and thermal management are critical.
Pinout
The IRF7749L1TRPBF is a HEXFET® power MOSFET designed by Infineon Technologies. It typically comes in a DirectFET® package, which is characterized by its low-profile, surface-mount design. This specific MOSFET is optimized for high-frequency applications and is used in various power management systems.
The IRF7749L1TRPBF features a 2-pin configuration. The pins are:
1. Source (S): This pin is connected to the source of the MOSFET, which is the terminal through which the current enters the device when the MOSFET is in operation.
2. Drain (D): This pin is connected to the drain of the MOSFET, which is the terminal through which the current exits the device when the MOSFET is conducting.
Additionally, the DirectFET® package might include a metal can that provides the gate (G) connection, though it's not a separate pin in the conventional sense. The DirectFET® package is designed for efficient thermal performance and low on-resistance, making it suitable for high-power applications.
The IRF7749L1TRPBF features a 2-pin configuration. The pins are:
1. Source (S): This pin is connected to the source of the MOSFET, which is the terminal through which the current enters the device when the MOSFET is in operation.
2. Drain (D): This pin is connected to the drain of the MOSFET, which is the terminal through which the current exits the device when the MOSFET is conducting.
Additionally, the DirectFET® package might include a metal can that provides the gate (G) connection, though it's not a separate pin in the conventional sense. The DirectFET® package is designed for efficient thermal performance and low on-resistance, making it suitable for high-power applications.
Manufacturer
The IRF7749L1TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs and manufactures a wide range of semiconductor solutions, including microcontrollers, sensors, automotive and power management ICs, and security solutions. They are known for their expertise in power electronics and their products are widely used in automotive, industrial, and consumer electronics applications.
Application
The IRF7749L1TRPBF is a HEXFET® power MOSFET typically used in applications such as power management, automotive electronics, motor control, and DC-DC converters. Its features, like low on-resistance and high-speed switching, make it suitable for environments requiring efficient power delivery and energy-saving. These characteristics are crucial in automotive systems for managing battery power, in industrial settings for driving motors, and in consumer electronics for optimizing power supplies. The device's robust design ensures reliability in demanding conditions.
Package
The IRF7749L1TRPBF is packaged in a TO-252 (D-PAK) surface-mount format.
