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IRF830APBF
+Lista de MateriaisMOSFET N-CH 500V 5A TO220AB
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FabricanteVishay Siliconix
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Peça do Fabricante #IRF830APBF
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Ficha Técnica IRF830APBF DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | IRF830 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Tube |
Visão Geral
Description
The IRF830APBF is a N-channel MOSFET, widely used in power electronics due to its high efficiency and fast switching capabilities. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 9.2A, making it suitable for medium to high voltage applications such as power supplies, motor drives, and inverter circuits.
With a low gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V, it allows for easy interfacing with microcontrollers and logic devices. The IRF830APBF has a low on-resistance (R_DS(on)), which minimizes conduction losses. Additionally, its fast switching speed reduces heat generation during operation.
The device comes in a TO-220 package, facilitating heat dissipation through proper heatsinking. It is part of the "APBF" series, indicating that it is RoHS compliant and suitable for lead-free soldering processes.
In summary, the IRF830APBF is a robust choice for designers requiring reliable performance in high-voltage applications.
With a low gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V, it allows for easy interfacing with microcontrollers and logic devices. The IRF830APBF has a low on-resistance (R_DS(on)), which minimizes conduction losses. Additionally, its fast switching speed reduces heat generation during operation.
The device comes in a TO-220 package, facilitating heat dissipation through proper heatsinking. It is part of the "APBF" series, indicating that it is RoHS compliant and suitable for lead-free soldering processes.
In summary, the IRF830APBF is a robust choice for designers requiring reliable performance in high-voltage applications.
Equivalent
The IRF830APBF is an N-channel MOSFET. Equivalent products include:
1. IRF840
2. IRF820
3. STP16NF06
4. FQP13N50C
5. MTP50N06
Ensure to verify specifications such as voltage, current ratings, and package type for compatibility when selecting an equivalent.
1. IRF840
2. IRF820
3. STP16NF06
4. FQP13N50C
5. MTP50N06
Ensure to verify specifications such as voltage, current ratings, and package type for compatibility when selecting an equivalent.
Features
The IRF830APBF is an N-channel MOSFET widely used in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (Id) up to 9.2A at a case temperature (Tc) of 25°C.
3. RDS(on): The on-resistance is low, typically around 0.33 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, facilitating easy driving with standard logic levels.
5. Package Type: It is available in a TO-220 package, allowing for effective thermal management.
6. Fast Switching: Designed for high-speed switching applications, improving overall efficiency in circuits.
7. Applications: Commonly used in power supplies, motor drives, and various switching applications.
Overall, the IRF830APBF combines high voltage and current capabilities with efficient performance, making it a popular choice in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (Id) up to 9.2A at a case temperature (Tc) of 25°C.
3. RDS(on): The on-resistance is low, typically around 0.33 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, facilitating easy driving with standard logic levels.
5. Package Type: It is available in a TO-220 package, allowing for effective thermal management.
6. Fast Switching: Designed for high-speed switching applications, improving overall efficiency in circuits.
7. Applications: Commonly used in power supplies, motor drives, and various switching applications.
Overall, the IRF830APBF combines high voltage and current capabilities with efficient performance, making it a popular choice in power electronics.
Pinout
The IRF830APBF is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal where the load is connected; current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): The terminal that connects to ground or the lower potential side of the circuit.
The IRF830APBF is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 9.2A. It is commonly used in power switching applications, such as in DC-DC converters and motor drives.
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal where the load is connected; current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): The terminal that connects to ground or the lower potential side of the circuit.
The IRF830APBF is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 9.2A. It is commonly used in power switching applications, such as in DC-DC converters and motor drives.
Manufacturer
The IRF830APBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is a German company that specializes in the development and production of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics.
Founded in 1999 as a spin-off from Siemens AG, Infineon focuses on power semiconductors, microcontrollers, and sensors. The company is known for its innovation in power management and energy efficiency, serving a diverse range of markets, including electric vehicles, renewable energy, and industrial automation. The "APBF" suffix in the part number indicates that the IRF830APBF is provided in a lead-free, RoHS-compliant package.
Infineon's commitment to sustainability, along with its extensive portfolio of products, positions it as a key player in the semiconductor industry, contributing to the advancement of technology and the reduction of energy consumption worldwide.
Founded in 1999 as a spin-off from Siemens AG, Infineon focuses on power semiconductors, microcontrollers, and sensors. The company is known for its innovation in power management and energy efficiency, serving a diverse range of markets, including electric vehicles, renewable energy, and industrial automation. The "APBF" suffix in the part number indicates that the IRF830APBF is provided in a lead-free, RoHS-compliant package.
Infineon's commitment to sustainability, along with its extensive portfolio of products, positions it as a key player in the semiconductor industry, contributing to the advancement of technology and the reduction of energy consumption worldwide.
Application
The IRF830APBF is an N-channel MOSFET primarily used in power applications. Its main application areas include:
1. Switching Power Supplies: Efficiently switches high currents in power converters.
2. Motor Control: Drives DC motors in various automation and robotics applications.
3. Power Amplifiers: Utilized in RF amplifiers and audio amplification circuits.
4. Lighting Control: Controls high-power LEDs and lighting systems.
5. H-Bridge Circuits: Used in H-bridge configurations for bidirectional motor control.
6. Protection Circuits: Acts as a switch in battery protection and over-current protection systems.
Its high voltage and current ratings make it suitable for these diverse applications.
1. Switching Power Supplies: Efficiently switches high currents in power converters.
2. Motor Control: Drives DC motors in various automation and robotics applications.
3. Power Amplifiers: Utilized in RF amplifiers and audio amplification circuits.
4. Lighting Control: Controls high-power LEDs and lighting systems.
5. H-Bridge Circuits: Used in H-bridge configurations for bidirectional motor control.
6. Protection Circuits: Acts as a switch in battery protection and over-current protection systems.
Its high voltage and current ratings make it suitable for these diverse applications.
Package
The IRF830APBF is typically packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for high-power applications in electronic circuits.
